发明授权
- 专利标题： Method of treating semiconductor substrates
- 专利标题（中）： 处理半导体衬底的方法
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申请号： US120436申请日： 1993-09-14
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公开(公告)号： US5380399A公开(公告)日： 1995-01-10
- 发明人: Naoto Miyashita , Koichi Takahashi , Mitsutoshi Koyama
- 申请人： Naoto Miyashita , Koichi Takahashi , Mitsutoshi Koyama
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX4-270901 19920914
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/304 ; H01L21/306 ; H01L21/31 ; B44C1/22 ; C03C15/00
摘要：
To heat treat a semiconductor substrate without forming an oxide film on the surface thereof, the method of heat treating a semiconductor substrate, comprises: a step 1 of carrying a semiconductor substrate into a heat treating chamber heated at a temperature 150.degree. C. or lower; a step 2 of heating the heat treating chamber up to about 200.degree. C. to emit moisture adhering to the semiconductor substrate; a step 3 of introducing an etching gas into the heat treating chamber to etch an oxide film formed on the surface of the semiconductor substrate; and a step 4 of raising the temperature within the heat treating chamber up to a heat treating temperature to heat treat the semiconductor substrate.
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