公开(公告)号：US06167583A

公开(公告)日：2001-01-02

申请号：US09078132

申请日：1998-05-14

Applicant: Naoto Miyashita ,  Masahiro Abe

Inventor： Naoto Miyashita ,  Masahiro Abe

IPC: B08B302

CPC classification number: H01L21/67028 ,  B08B1/04

Abstract: A double side cleaning apparatus includes a pair of roll-like brushes and at least one cleaning brush. The roll-like brushes are driven to rotate in opposite directions, and a semiconductor wafer is arranged between them in a non-contact manner. The cleaning brush is arranged near the pair of roll-like brushes. While the semiconductor wafer is arranged between the pair of roll-like brushes and its upper and lower surfaces are being cleaned, the cleaning brush brushes the side surface of the semiconductor wafer. A cleaning agent is supplied from the pair of roll-like brushes to the semiconductor wafer to clean it. Since the upper and lower surfaces of the semiconductor wafer are cleaned in a non-contact manner, dust can be removed efficiently (within a short period of time and a small space).

Abstract translation: 双面清洁装置包括一对卷状刷和至少一个清洁刷。 卷状电刷被驱动以沿相反方向旋转，半导体晶片以非接触方式布置在它们之间。 清洁刷布置在一对辊状刷附近。 当半导体晶片布置在一对辊状电刷之间并且其上表面和下表面被清洁时，清洁刷刷刷半导体晶片的侧表面。 从一对辊状刷向半导体晶片提供清洁剂以将其清洁。 由于半导体晶片的上表面和下表面以非接触的方式被清洁，因此可以有效地（在短时间内和小的空间）内去除灰尘。

公开(公告)号：US6001238A

公开(公告)日：1999-12-14

申请号：US941045

申请日：1997-09-30

Applicant: Jun Takayasu ,  Naoto Miyashita

Inventor： Jun Takayasu ,  Naoto Miyashita

IPC: C02F1/46 ,  C02F1/00 ,  C02F1/461 ,  C02F1/467 ,  C25B9/00 ,  C25B9/06 ,  C25B9/08 ,  C25B9/18 ,  H01L21/304

CPC classification number: C02F1/4678 ,  C02F1/46109 ,  C02F1/001 ,  C02F1/4618 ,  C02F2001/46138 ,  C02F2103/04 ,  C02F2201/46115 ,  C02F2201/4617 ,  Y10S210/90

Abstract: A method of reducing the concentration of metal ions in pure water or ultrapure water and thereby obtaining pure water or ultrapure water. Such purified pure water or purified ultrapure water is used, for example, when washing semiconductor wafers, as a starting material of electrolytic ionic water, or for diluting washing water. A pair of carbon electrodes is disposed in an ultrapure water storage tank containing pure water or ultrapure water or in a purifying tank disposed in a line leading from an ultrapure water storage tank. A D.C. voltage is applied across the electrode pair. A carbon electrode material having a large specific surface area is chosen, and an electrode structure with which there is little detachment of carbon fragments is used. After the carbon electrode is molded, a carbon layer is formed on the surface of the molding by dipping the molding in an amorphous carbon bath. Because the carbon layer penetrates into the pores in the molding surface, the bonds between the carbon elements are strengthened, preventing carbon fragments from detaching. Because the electrode surfaces may be covered with filters, even if carbon fragments do detach, they are caught by the filters, preventing particles from entering the purified pure water or purified ultrapure water.

Abstract translation: 一种降低纯水或超纯水中金属离子浓度，从而获得纯水或超纯水的方法。 使用这种纯化的纯水或纯化的超纯水，例如，当洗涤半导体晶片，作为电解离子水的起始材料或稀释洗涤水时。 一对碳电极设置在含有纯水或超纯水的超纯水储存罐中，或者设置在从超纯水储存罐引出的管线中的净化槽中。 跨电极对施加直流电压。 选择具有大比表面积的碳电极材料，并且使用与碳片断分离很少的电极结构。 在碳电极成型之后，通过将成型体浸渍在无定形碳浴中，在模制品的表面上形成碳层。 因为碳层渗透到成型表面的孔中，所以碳元素之间的键被加强，防止碳碎片脱落。 由于电极表面可能被过滤器覆盖，即使碳片断裂，它们被过滤器捕获，防止颗粒进入纯化的纯水或纯化的超纯水。

公开(公告)号：US5880032A

公开(公告)日：1999-03-09

申请号：US689111

申请日：1996-07-30

Applicant: Kenji Doi ,  Ichiro Katakabe ,  Naoto Miyashita

Inventor： Kenji Doi ,  Ichiro Katakabe ,  Naoto Miyashita

IPC: H01L21/311 ,  H01L21/00

CPC classification number: H01L21/31116 ,  Y10S438/906

Abstract: A method of manufacturing a semiconductor device comprises the steps of introducing a first gas containing steam or alcohol into a processing vessel housing a semiconductor substrate, and introducing a hydrogen fluoride gas as a second gas into the processing vessel after stopping introduction of the first gas into the process chamber.

Abstract translation: 一种制造半导体器件的方法包括以下步骤：将含有蒸汽或醇的第一气体引入到容纳半导体衬底的处理容器中，并且在停止将第一气体引入第一气体之后，将作为第二气体的氟化氢气体引入处理容器 处理室。

公开(公告)号：US5858859A

公开(公告)日：1999-01-12

申请号：US874317

申请日：1997-06-13

Applicant: Naoto Miyashita ,  Koichi Takahashi

Inventor： Naoto Miyashita ,  Koichi Takahashi

IPC: H01L21/306 ,  H01L21/308 ,  H01L21/762 ,  H01L21/76

CPC classification number: H01L21/3085 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3083 ,  H01L21/76235 ,  Y10S438/978

Abstract: A device-isolating trench having a taper at its upper portion is formed in a silicon semiconductor substrate. Then, a silicon oxide film is formed on the inner wall of the trench and the surface of the semiconductor substrate near the trench by an oxidizing method, and polycrystalline silicon is buried in the trench.

Abstract translation: 在硅半导体衬底中形成在其上部具有锥形的器件隔离沟槽。 然后，通过氧化法在沟槽的内壁和沟槽附近的半导体衬底的表面上形成氧化硅膜，并且将多晶硅埋入沟槽中。

公开(公告)号：US5346555A

公开(公告)日：1994-09-13

申请号：US98097

申请日：1993-07-28

Applicant: Shinji Nunotani ,  Koichi Takahashi ,  Naoto Miyashita

Inventor： Shinji Nunotani ,  Koichi Takahashi ,  Naoto Miyashita

IPC: H01L21/205 ,  C23C16/46 ,  C30B25/08 ,  H01L21/00 ,  H01L21/31 ,  C23C16/00

CPC classification number: C23C16/463 ,  C23C16/46 ,  C30B25/08 ,  H01L21/67115

Abstract: A device for a thermal treatment process and a film forming process includes a chamber for forming a thin-film on a semiconductor substrate under high temperatures, a heater positioned to enclose the outer periphery of the chamber, for heating the inside of the chamber to a high temperature; and insulator positioned to enclose the outer periphery of the heater. The device further has a first space formed between the chamber and the heater, a second space formed between the heater and the insulator, first and second exhaust sections provided for exhausting air from the first and second spaces. In the device, prior to inserting the semiconductor substrate into and removing the semiconductor substrate from the chamber, high temperature air is exhausted from the first and second spaces by the first and second exhaust sections, respectively, to cool inside of the chamber.

Abstract translation: 用于热处理工艺和成膜工艺的装置包括：用于在高温下在半导体衬底上形成薄膜的腔室，设置成包围腔室外周的加热器，用于将腔室内部加热到 高温; 绝缘体被定位成包围加热器的外周。 所述装置还具有形成在所述室和所述加热器之间的第一空间，形成在所述加热器和所述绝缘体之间的第二空间，设置成用于从所述第一空间和所述第二空间排出空气的第一和第二排气部。 在该装置中，在将半导体衬底插入室内并从半导体衬底移除之前，高温空气分别通过第一和第二排气部分从第一和第二空间排出，以在室内部冷却。

公开(公告)号：US07005382B2

公开(公告)日：2006-02-28

申请号：US10694890

申请日：2003-10-29

Applicant: Kazuo Nishimoto ,  Tatsuaki Sakano ,  Akihiro Takemura ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Naoto Miyashita ,  Atsushi Shigeta ,  Yoshitaka Matsui ,  Kazuhiko Ida

Inventor： Kazuo Nishimoto ,  Tatsuaki Sakano ,  Akihiro Takemura ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Naoto Miyashita ,  Atsushi Shigeta ,  Yoshitaka Matsui ,  Kazuhiko Ida

IPC: B24B1/00

CPC classification number: H01L21/3212 ,  C09G1/02 ,  H01L21/02024

Abstract: Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium. The second aqueous dispersion is composed of a first aqueous dispersion material (I) obtained by mixing a water-soluble quaternary ammonium salt and an inorganic acid salt into an aqueous medium, and a second aqueous dispersion material (II) obtained by mixing a water-soluble polymer and another basic organic compound other than the water-soluble quaternary ammonium salt into an aqueous medium. Abrasive grains are contained in at least one of the aqueous dispersion materials.

Abstract translation: 提供了用于化学机械抛光的水分散体，其平坦化待抛光的表面并具有高的储存稳定性，当抛光不同材料的表面时选择性优异的化学机械抛光工艺以及半导体器件的生产工艺。 第一种水性分散体含有水溶性季铵盐，无机酸盐，磨粒和水性介质。 第二水性分散体至少包含水溶性季铵盐，除水溶性季铵盐以外的其它碱性有机化合物，无机酸盐，水溶性聚合物，磨料颗粒和水性介质。 第二水性分散体由通过将水溶性季铵盐和无机酸盐混合到水性介质中而得到的第一水分散体（I）和第二水分散体（II） 水溶性聚合物和除了水溶性季铵盐之外的另一种碱性有机化合物转化成水性介质。 磨粒在至少一种水分散体中含有。

公开(公告)号：US06783658B2

公开(公告)日：2004-08-31

申请号：US10261949

申请日：2002-10-02

Applicant: Yoshitaka Matsui ,  Hiroshi Kosukegawa ,  Masako Kodera ,  Naoto Miyashita

Inventor： Yoshitaka Matsui ,  Hiroshi Kosukegawa ,  Masako Kodera ,  Naoto Miyashita

IPC: B23H1100

CPC classification number: C25F3/00 ,  H01L21/32115

Abstract: A target material is electropolished by applying a voltage between an anode electrode and a counter electrode while bringing the anode electrode into contact with the surface of the target material. The anode electrode is formed of an electrode material having a current density not higher than 10 mA/cm2 upon application of a voltage of +2.5V vs. silver/silver chloride electrode within a 0.1 M perchloric acid solution in an electrochemical measurement using a potentiostat.

Abstract translation: 通过在阳极电极和对电极之间施加电压同时使阳极电极与靶材料的表面接触来对目标材料进行电抛光。 在电化学测量中，在0.1M高氯酸溶液内施加+ 2.5V的电压与银/氯化银电极相比，阳极电极由电流密度不高于10mA / cm 2的电极材料形成 使用恒电位仪

公开(公告)号：US06723226B1

公开(公告)日：2004-04-20

申请号：US08631226

申请日：1996-04-12

Applicant: Jun Takayasu ,  Naoto Miyashita ,  Mikiko Kawaguchi

Inventor： Jun Takayasu ,  Naoto Miyashita ,  Mikiko Kawaguchi

IPC: C02F1461

CPC classification number: C02F1/4618 ,  C02F1/461 ,  C02F1/688 ,  C02F9/00 ,  C02F2103/02 ,  Y10S134/902

Abstract: In forming an electrolytic water, pure water or ultra-pure water is added to at least one solid supporting electrolyte selected from the group consisting of oxalic acid, ammonium oxalate, ammonium formate, ammonium bicarbonate, and ammonium tartrate to prepare a solution saturated with the supporting electrolyte. The solution containing the supporting electrolyte is subjected to hydrolysis to obtain an anodic water and a cathodic water.

Abstract translation: 在形成电解水时，将纯水或超纯水加入到选自草酸，草酸铵，甲酸铵，碳酸氢铵和酒石酸铵的至少一种固体支持电解质中，以制备饱和的溶液 支持电解质。 将含有支持电解质的溶液进行水解，得到阳极水和阴极水。

公开(公告)号：US06468911B1

公开(公告)日：2002-10-22

申请号：US09655918

申请日：2000-09-06

Applicant: Naoto Miyashita ,  Takeshi Nishioka

Inventor： Naoto Miyashita ,  Takeshi Nishioka

IPC: H01L2100

CPC classification number: H01L21/3212 ,  B24B37/044 ,  C09G1/02

Abstract: The surface of a semiconductor device is polished by first supplying a polishing pad with a slurry that contains a solvent, abrasive grains, and an additive for making the viscosity of the slurry variable so that the top portion of the polishing pad is soaked with the slurry, then supplying the polishing pad with a viscosity modifier for increasing the viscosity of the slurry and hardening the top portion of the polishing pad soaked with the slurry, and finally polishing the surface of the semiconductor device with the slurry having its viscosity increased and the polishing pad having its top portion hardened.

Abstract translation: 通过首先向抛光垫提供含有溶剂，磨料颗粒和添加剂的浆料来抛光半导体器件的表面，以使浆料的粘度可变，使得抛光垫的顶部用浆料浸泡 然后向抛光垫提供粘度调节剂，以增加浆料的粘度并硬化用浆料浸泡的抛光垫的顶部，最后用其粘度增加的浆料和抛光剂抛光半导体器件的表面 垫的顶部硬化。

公开(公告)号：US06354913B1

公开(公告)日：2002-03-12

申请号：US09214431

申请日：1999-01-06

Applicant: Naoto Miyashita ,  Yoshihiro Minami ,  Kenji Doi ,  Jun Takayasu ,  Hiroyuki Kohno ,  Hiroshi Kato ,  Kazuhiko Hayashi

Inventor： Naoto Miyashita ,  Yoshihiro Minami ,  Kenji Doi ,  Jun Takayasu ,  Hiroyuki Kohno ,  Hiroshi Kato ,  Kazuhiko Hayashi

IPC: B24B100

CPC classification number: B24B37/24 ,  B24B37/0056 ,  B24B37/044 ,  B24D3/20 ,  B24D3/344 ,  C09G1/02 ,  H01L21/3212

Abstract: A semiconductor wafer or a film formed thereon is polished by using a polishing agent comprising abrasive containing silica particles as the main component, water as a solvent, and a water-soluble cellulose, an alkali metal impurity content of the polishing agent being 5C ppm or less where the polishing agent contains C % by weight of the water-soluble cellulose, so as to flatten the semiconductor wafer without doing damage to the wafer or the film formed thereon and without bringing about a dishing problem in the polished surface.

Abstract translation: 通过使用包含二氧化硅颗粒作为主要成分的研磨剂，作为溶剂的水和水溶性纤维素，研磨剂的碱金属杂质含量为5ppm或以下，研磨半导体晶片或其上形成的膜 抛光剂含有C％（重量）的水溶性纤维素，以使得半导体晶片平坦化，而不会对晶片或其上形成的膜造成损害，而不会在抛光表面产生凹陷问题。