- 专利标题： Semiconductor device including semiconductor layer having impurity region and method of manufacturing the same
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申请号： US838993申请日： 1992-02-21
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公开(公告)号： US5381029A公开(公告)日： 1995-01-10
- 发明人: Koji Eguchi , Natsuo Ajika , Kazuyuki Sugahara
- 申请人： Koji Eguchi , Natsuo Ajika , Kazuyuki Sugahara
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-036259 19910301; JPX3-230648 19910911
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/336 ; H01L21/768 ; H01L21/84 ; H01L27/06 ; H01L27/12 ; H01L29/49 ; H01L29/78 ; H01L29/786 ; H01L27/01 ; H01L29/06
摘要：
A semiconductor device capable of effectively preventing a dielectric breakdown of a gate oxide film without adversely affecting the characteristics of a transistor and a process of manufacturing the same are disclosed. The semiconductor device comprises a SOI film 2 whose upper angular parts are rounded off by sputter etching and a gate oxide film 3 formed on SOI film 2 with an almost uniform thickness. Therefore, electric field concentration in the upper angular parts of SOI film 2 is reduced. Furthermore, the control characteristics of the transistor are enhanced by the uniform gate oxide film 3. As a result, a dielectric breakdown of the gate oxide film is effectively prevented without adversely affecting the characteristics of the transistor. Sputter etching enabling processing at a low temperature is used, so that the upper angular parts of SOI film 2 are rounded off without adversely affecting a semiconductor element formed in the lower layer.
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