发明授权
- 专利标题： Semiconductor device including semiconductor diamond
- 专利标题（中）： 半导体器件包括半导体金刚石
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申请号： US118940申请日： 1993-09-09
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公开(公告)号： US5382809A公开(公告)日： 1995-01-17
- 发明人: Yoshiki Nishibayashi , Tadashi Tomikawa , Shinichi Shikata
- 申请人： Yoshiki Nishibayashi , Tadashi Tomikawa , Shinichi Shikata
- 申请人地址： JPX Osaka
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX4-244723 19920914; JPX5-214192 19930830; JPX5-216286 19930831
- 主分类号： H01L21/04
- IPC分类号： H01L21/04 ; H01L21/205 ; H01L29/808 ; H01L29/78 ; H01L29/16 ; H01L29/167
摘要：
A semiconductor device having an MISFET-like structure. The semiconductor device comprises: an p-type semiconductor diamond layer disposed on an insulating diamond substrate for providing a channel region; and a drain electrode, a source electrode and a gate electrode disposed on the p-type diamond layer. An intermediate region comprising diamond doped with at least an n-type dopant such as nitrogen atoms, is formed between the channel region and the gate electrode.
公开/授权文献
- US6038947A Quick return feed for machine tool 公开/授权日：2000-03-21
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