发明授权
US5386128A Monolithic in-based III-V compound semiconductor focal plane array cell
with single stage CCD output
失效
具有单级CCD输出的单片In-III-V化合物半导体焦平面阵列单元
- 专利标题: Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output
- 专利标题(中): 具有单级CCD输出的单片In-III-V化合物半导体焦平面阵列单元
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申请号: US186185申请日: 1994-01-21
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公开(公告)号: US5386128A公开(公告)日: 1995-01-31
- 发明人: Eric R. Fossum , Thomas J. Cunningham , Timothy N. Krabach , Craig O. Staller
- 申请人: Eric R. Fossum , Thomas J. Cunningham , Timothy N. Krabach , Craig O. Staller
- 申请人地址: DC Washington
- 专利权人: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- 当前专利权人: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- 当前专利权人地址: DC Washington
- 主分类号: H01L27/148
- IPC分类号: H01L27/148 ; H01L29/765 ; H01L29/78 ; H01L27/14 ; H01L31/00
摘要:
A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.
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