发明授权
- 专利标题: Method of producing semiconductor substrate
- 专利标题(中): 半导体衬底的制造方法
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申请号: US116279申请日: 1993-09-03
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公开(公告)号: US5395788A公开(公告)日: 1995-03-07
- 发明人: Takao Abe , Yasuaki Nakazato , Atsuo Uchiyama
- 申请人: Takao Abe , Yasuaki Nakazato , Atsuo Uchiyama
- 申请人地址: JPX Tokyo
- 专利权人: Shin Etsu Handotai Co., Ltd.
- 当前专利权人: Shin Etsu Handotai Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX3-074420 19910315
- 主分类号: G02F1/1362
- IPC分类号: G02F1/1362 ; H01L21/20 ; H01L21/762 ; H01L21/76
摘要:
The present invention provides a method of making a semiconductor substrate having an SOI structure by temporarily bonding together two wafers having different thermal expansion coefficients to allow thinning of at least one of the wafers by chemical and/or mechanical treatment(s) to reduce the risk of strain, separation, cracks to the wafers followed by one or more heat treating steps to fully bond the wafers together. The method can produce semiconductor substrate having an SOI structure which can provide a silicon layer thin enough to allow various integrated circuits, or TFL-LCD or the like to be formed.
公开/授权文献
- USPP6748P Rose plant/Kinschoon 公开/授权日:1989-04-18