公开(公告)号：US5266824A

公开(公告)日：1993-11-30

申请号：US852064

申请日：1992-03-16

申请人： Takao Abe ,  Yasuaki Nakazato ,  Atsuo Uchiyama

发明人： Takao Abe ,  Yasuaki Nakazato ,  Atsuo Uchiyama

IPC分类号： H01L21/02 ,  G02F1/1362 ,  H01L21/20 ,  H01L21/336 ,  H01L21/762 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L27/01 ,  H01L39/00

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  G02F1/13454 ,  Y10S438/977

摘要： The present invention provides a semiconductor substrate which is formed by bonding wafers together by heat treatment without causing the substrate to be thermally damaged to have thermal strain, separation, cracks, etc. due to the difference in the thermal expansion coefficient of the wafers, and particularly a semiconductor substrate having an SOI structure which can provide a silicon film thin enough to allow various integrated circuits or TFT-LCD to be formed In the present invention, after wafers are bonded temporarily in a low temperature range, one of the wafers is made thin by chemical treatment, then the wafers were bonded fully by heat treatment in a temperature range (where the thermal expansion coefficient of the wafer are not affected) higher than the above low temperature range, and then said one wafer can be made thinner by mechanical grinding or polishing mechano-chemically. Thus according to the present invention, even if a semiconductor substrate is formed by sticking a silicon wafer and a quartz wafer together, damages that will be caused thermally due to thermal expansion can be prevented and a film which is made thin enough required for forming various integrated circuits or TFT-LCD or the like can be easily obtained.

公开(公告)号：US5395788A

公开(公告)日：1995-03-07

申请号：US116279

申请日：1993-09-03

申请人： Takao Abe ,  Yasuaki Nakazato ,  Atsuo Uchiyama

发明人： Takao Abe ,  Yasuaki Nakazato ,  Atsuo Uchiyama

IPC分类号： G02F1/1362 ,  H01L21/20 ,  H01L21/762 ,  H01L21/76

CPC分类号： H01L21/2007 ,  H01L21/76251 ,  G02F1/13454 ,  Y10S148/012 ,  Y10S148/15

摘要： The present invention provides a method of making a semiconductor substrate having an SOI structure by temporarily bonding together two wafers having different thermal expansion coefficients to allow thinning of at least one of the wafers by chemical and/or mechanical treatment(s) to reduce the risk of strain, separation, cracks to the wafers followed by one or more heat treating steps to fully bond the wafers together. The method can produce semiconductor substrate having an SOI structure which can provide a silicon layer thin enough to allow various integrated circuits, or TFL-LCD or the like to be formed.

摘要翻译： 本发明提供一种制造具有SOI结构的半导体衬底的方法，该半导体衬底通过将具有不同热膨胀系数的两个晶片暂时接合在一起，以允许通过化学和/或机械处理使至少一个晶片变薄以降低风险 的应变，分离，裂纹到晶片，随后进行一个或多个热处理步骤以将晶片完全结合在一起。 该方法可以制造具有SOI结构的半导体衬底，其能够提供足够薄的硅层，以允许形成各种集成电路或TFL-LCD等。

公开(公告)号：US5213657A

公开(公告)日：1993-05-25

申请号：US921348

申请日：1992-07-29

申请人： Takao Abe ,  Yasuaki Nakazato ,  Atsuo Uchiyama

发明人： Takao Abe ,  Yasuaki Nakazato ,  Atsuo Uchiyama

IPC分类号： H01L21/20 ,  H01L21/308 ,  H01L21/762

CPC分类号： H01L21/3081 ,  H01L21/2007 ,  H01L21/3083 ,  H01L21/76251 ,  H01L22/12 ,  H01L22/20 ,  Y10S438/911 ,  Y10S438/924

摘要： A Si single crystal thin film is classified according to the thickness into several areas such that the areas where the thin film is thicker is made oxide layer-free and the areas where the thin film is thinner is covered with oxide layer. Then, oxidation is conducted so that the thicker the thin film the lower the Si interface becomes, utilizing the different growth rates of the oxide layer in these areas. The thin film surface with a resulting staircase configuration is then leveled by the subsequent polishing treatment. In other method, oxide layer is formed in such way that the areas with a thicker thin film thickness will have a thinner oxide layer and the areas with a thinner thin film thickness will have a thicker oxide layer, and oxidation is conducted such that the thicker the thin film the lower the Si interface becomes.

公开(公告)号：US5223080A

公开(公告)日：1993-06-29

申请号：US799182

申请日：1991-11-27

申请人： Yutaka Ohta ,  Masatake Katayama ,  Takao Abe ,  Yasuaki Nakazato

发明人： Yutaka Ohta ,  Masatake Katayama ,  Takao Abe ,  Yasuaki Nakazato

IPC分类号： H01L21/66 ,  C30B33/00 ,  G01B11/06 ,  H01L21/20 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/84

CPC分类号： C30B29/06 ,  C30B33/00 ,  G01B11/0683 ,  H01L21/3065 ,  H01L21/76251 ,  H01L22/12 ,  H01L22/20

摘要： A method for controlling the thickness of a single crystal thin-film silicon layer bonded on a dielectric substrate in a SOI substrate thereby effecting conversion of said single crystal silicon layer to a thin film is disclosed. To be more precise, said method comprises selectively and hypothetically dividing the entire surface of said single crystal silicon layer destined to undergo a chemical vapor-phase corrosion reaction for the sake of said conversion into necessary minute sections and, at the sametime, taking preparatory measurement of the thickness of said single crystal silicon layer in each of said minute sections, and effecting on each of said minute sections said conversion to a thin film by a chemical vapor-phase corrosion reaction adjusted in accordance with the measured thickness of layer. The conversion to a thin film is attained with the dispersion of thickness of the single crystal silicon layer controlled with high accuracy.

公开(公告)号：US08821636B2

公开(公告)日：2014-09-02

申请号：US12936450

申请日：2009-04-24

申请人： Takao Abe ,  Kouzou Yokota ,  Kouji Mizuishi

发明人： Takao Abe ,  Kouzou Yokota ,  Kouji Mizuishi

IPC分类号： C30B15/02 ,  C30B15/14 ,  C30B29/06 ,  C30B15/00 ,  C30B35/00

CPC分类号： C30B15/14 ,  C30B15/00 ,  C30B29/06 ,  C30B35/00 ,  Y10T117/1032 ,  Y10T117/1056 ,  Y10T117/1068

摘要： The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved.

摘要翻译： 本发明是一种基于切克劳斯基法的单晶制造装置，其具有构造成容纳包括坩埚的热区部件的主室和被配置为容纳和取出从原料熔体拉出的单晶的拉腔， 该设备还包括与拉动室可互换的多用途室，其中用于加热装入坩埚的原料的加热装置和用于在拉出单晶之后冷却热区部件的冷却装置分别放置在多用途室中。 结果，提供了一种单晶制造装置，其能够在大直径的单晶例如约200mm以上的制造中，单晶制造装置的工作速率和单晶制造装置的生产率 水晶要改善。

公开(公告)号：US20140221330A1

公开(公告)日：2014-08-07

申请号：US14234456

申请日：2012-07-26

申请人： Akihiro Morinaka ,  Kazunori Maebashi ,  Takashi Ida ,  Muneo Hikida ,  Mototsugu Yamada ,  Takao Abe

发明人： Akihiro Morinaka ,  Kazunori Maebashi ,  Takashi Ida ,  Muneo Hikida ,  Mototsugu Yamada ,  Takao Abe

IPC分类号： C07C69/593 ,  A61K45/06 ,  C07C69/612 ,  A61K31/216 ,  C07C69/618 ,  C07C69/732 ,  C07D309/06 ,  A61K31/351 ,  C07C69/608 ,  C07D213/55 ,  A61K31/4406 ,  C07D295/108 ,  A61K31/5375 ,  C07D211/46 ,  A61K31/45 ,  C07D233/64 ,  A61K31/4174 ,  C07D207/12 ,  A61K31/4015 ,  A61K31/225

CPC分类号： C07C69/593 ,  A61K31/194 ,  A61K31/216 ,  A61K31/225 ,  A61K31/351 ,  A61K31/40 ,  A61K31/4015 ,  A61K31/407 ,  A61K31/4164 ,  A61K31/4174 ,  A61K31/4406 ,  A61K31/45 ,  A61K31/5375 ,  A61K45/06 ,  C07C57/13 ,  C07C57/26 ,  C07C57/30 ,  C07C57/42 ,  C07C57/48 ,  C07C57/50 ,  C07C59/46 ,  C07C59/64 ,  C07C63/66 ,  C07C69/608 ,  C07C69/612 ,  C07C69/618 ,  C07C69/732 ,  C07C217/18 ,  C07C233/65 ,  C07C235/20 ,  C07C237/22 ,  C07C279/08 ,  C07D207/12 ,  C07D211/46 ,  C07D213/55 ,  C07D233/64 ,  C07D295/108 ,  C07D309/06 ,  Y02A50/473 ,  A61K2300/00

摘要： An objective of the present invention is to provide a novel NDM (New Delhi metallo-β-lactamase) inhibitor that functions as a drug for restoring the antibacterial activity of β-lactam antibiotics that have been inactivated as a result of decomposition by NDM. According to the present invention, there is provided an NDM inhibitor contains a compound represented by general formula (I):

摘要翻译： 本发明的目的是提供一种新型的NDM（新德里金属 - β-内酰胺酶）抑制剂，其作为恢复由NDM分解而灭活的β-内酰胺抗生素的抗菌活性的药物 。 根据本发明，提供了含有通式（I）表示的化合物的NDM抑制剂：

公开(公告)号：US08337616B2

公开(公告)日：2012-12-25

申请号：US12734423

申请日：2008-12-01

申请人： Takao Abe

发明人： Takao Abe

IPC分类号： C30B35/00 ,  C30B15/00

CPC分类号： C30B29/06 ,  C30B15/16 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A single-crystal manufacturing apparatus comprises a chamber, a crucible in the chamber, a heater arranged around the crucible, a lifting mechanism for lifting a seed crystal, and a guide passage for the seed crystal and a grown single crystal. In the single-crystal manufacturing apparatus, a material polycrystal contained the crucible is melted by a heater, and the seed crystal is made to contact the molten polycrystal and is lifted. The single-crystal manufacturing apparatus comprises a cylindrical quartz tube having a curved bottom portion, and a dome-shaped quartz plate. The curved bottom portion faces the crucible from the upper portion of the chamber through the guide passage. The quartz plate is arranged to enclose the quartz tube. The quartz tube has a reflecting structure for reflecting a heat ray from at least its bottom portion whereas the quartz plate has a reflecting structure for reflecting the heat ray to the crucible.

摘要翻译： 单晶体制造装置包括室，坩埚在室内，在坩埚周围设置的加热器，用于提升晶种的提升机构，以及用于晶种的引导通道和生长的单晶。 在单晶体制造装置中，包含坩埚的多晶体被加热器熔化，使晶种与熔融的多晶体接触并提升。 单晶制造装置包括具有弯曲底部的圆柱形石英管和圆顶状石英板。 弯曲的底部部分通过引导通道从腔室的上部面向坩埚。 石英板被设置成封闭石英管。 石英管具有用于从至少其底部反射热射线的反射结构，而石英板具有用于将热射线反射到坩埚的反射结构。

公开(公告)号：US20120071457A1

公开(公告)日：2012-03-22

申请号：US13306372

申请日：2011-11-29

申请人： Ken Chikauchi ,  Mizuyo Ida ,  Takao Abe ,  Yukiko Hiraiwa ,  Akihiro Morinaka ,  Toshiaki Kudo

发明人： Ken Chikauchi ,  Mizuyo Ida ,  Takao Abe ,  Yukiko Hiraiwa ,  Akihiro Morinaka ,  Toshiaki Kudo

IPC分类号： A61K31/546 ,  A61K31/4196 ,  A61K31/4439 ,  C07C69/593 ,  A61P31/04 ,  C07C69/618 ,  C07D309/06 ,  C07D213/55 ,  C07D295/145 ,  C07D295/192 ,  A61K31/407 ,  C07C57/13

CPC分类号： A61K31/225 ,  A61K31/166 ,  A61K31/194 ,  A61K31/215 ,  A61K31/235 ,  A61K31/24 ,  A61K31/351 ,  A61K31/40 ,  A61K31/407 ,  A61K31/4164 ,  A61K31/4406 ,  A61K31/445 ,  A61K31/4453 ,  A61K31/495 ,  A61K31/5375 ,  A61K31/546 ,  A61K45/06 ,  C07C51/00 ,  C07C57/13 ,  C07C57/145 ,  C07C57/26 ,  C07C57/42 ,  C07C57/50 ,  C07C59/52 ,  C07C59/64 ,  C07C59/70 ,  C07C69/593 ,  C07C69/60 ,  C07C69/608 ,  C07C69/618 ,  C07C69/732 ,  C07C69/734 ,  C07C217/22 ,  C07C233/65 ,  C07C235/20 ,  C07C235/84 ,  C07C237/22 ,  C07C279/08 ,  C07C279/14 ,  C07C323/54 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2602/08 ,  C07D207/12 ,  C07D211/46 ,  C07D211/60 ,  C07D213/55 ,  C07D213/80 ,  C07D233/60 ,  C07D295/15 ,  C07D295/16 ,  C07D295/192 ,  C07D309/06 ,  Y02A50/473 ,  Y02A50/475 ,  A61K2300/00

摘要： A new metallo-β-lactamase inhibitor which acts as a medicament for inhibiting the inactivation of β-lactam antibiotics and recovering anti-bacterial activities is disclosed. The maleic acid derivatives having the general formula (I) have metallo-β-lactamase inhibiting activities. It is possible to recover the anti-bacterial activities of β-lactam antibiotics against metallo-β-lactamase producing bacteria by combining the compound of the general formula (I) with β-lactam antibiotics.

摘要翻译： 公开了一种新的金属 - β-内酰胺酶抑制剂，其用作抑制β-内酰胺抗生素灭活和回收抗细菌活性的药物。 具有通式（I）的马来酸衍生物具有金属 - β-内酰胺酶抑制活性。 通过将通式（I）的化合物与β-内酰胺抗生素结合，可以回收抗β-生物反相抗生素对产生金属 - β-内酰胺酶的细菌的抗菌活性。

公开(公告)号：US20110030612A1

公开(公告)日：2011-02-10

申请号：US12936450

申请日：2009-04-24

申请人： Takao Abe ,  Kouzou Yokota ,  Kouji Mizuishi

发明人： Takao Abe ,  Kouzou Yokota ,  Kouji Mizuishi

IPC分类号： C30B15/00 ,  C30B15/10 ,  C30B15/14

CPC分类号： C30B15/14 ,  C30B15/00 ,  C30B29/06 ,  C30B35/00 ,  Y10T117/1032 ,  Y10T117/1056 ,  Y10T117/1068

摘要： The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved.

摘要翻译： 本发明是一种基于切克劳斯基法的单晶制造装置，其具有构造成容纳包括坩埚的热区部件的主室和被配置为容纳和取出从原料熔体拉出的单晶的拉腔， 该设备还包括与拉动室可互换的多用途室，其中用于加热装入坩埚的原料的加热装置和用于在拉出单晶之后冷却热区部件的冷却装置分别放置在多用途室中。 结果，提供了一种单晶制造装置，其能够在大直径的单晶例如约200mm以上的制造中，单晶制造装置的工作速率和单晶制造装置的生产率 水晶要改善。

公开(公告)号：US07538970B2

公开(公告)日：2009-05-26

申请号：US11322025

申请日：2005-12-29

申请人： Takahiro Aoki ,  Shunji Saitou ,  Takao Abe

发明人： Takahiro Aoki ,  Shunji Saitou ,  Takao Abe

IPC分类号： G11B5/596

CPC分类号： G11B7/08505 ,  G11B5/5547

摘要： A seek-information storing unit stores seek information including a correlation between a seek distance indicating a shift distance from a current track to a target track where a target frame for a data input/out is located and a seek time indicating a shifting time that takes for a head to shift from the current track to the target track, based on an actual measurement. A head-shift control unit controls a shift of the head based on an estimated time obtained by adding a rotational delay time that takes until the target frame arrives at the head position after the head arrives at the target track to the seek time acquired from the seek information.

摘要翻译： 搜索信息存储单元存储包括指示从当前轨道到目标轨道的移动距离的寻找距离与用于数据输入/输出的目标帧所在的目标轨迹之间的相关性的寻道信息，以及指示采取的移动时间的寻道时间 根据实际测量，使头从当前轨道转移到目标轨道。 头移动控制单元基于通过将头到达目标轨迹之后的目标帧到达头部位置的旋转延迟时间与从 寻求信息。