发明授权
- 专利标题： Method of manufacturing a light-emitting semiconductor device substrate
- 专利标题（中）： 制造发光半导体器件基板的方法
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申请号： US984920申请日： 1992-12-02
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公开(公告)号： US5401684A公开(公告)日： 1995-03-28
- 发明人: Masato Yamada , Takao Takenaka , Shinji Orimo
- 申请人： Masato Yamada , Takao Takenaka , Shinji Orimo
- 申请人地址： JPX Tokyo
- 专利权人： Shin-Etsu Handatai Co., Ltd.
- 当前专利权人： Shin-Etsu Handatai Co., Ltd.
- 当前专利权人地址： JPX Tokyo
- 主分类号： H01L21/208
- IPC分类号： H01L21/208 ; H01L33/00 ; H01L33/30 ; H01L33/40
摘要：
Disclosed are a light-emitting semiconductor device substrate and a method of manufacturing the same. The substrate is prepared by causing a Ga.sub.1-x Al.sub.x As compound semiconductor single crystalline thick-film layer having a first AlAs mole fraction and a low Al containing and oxidation-delaying Ga.sub.1-y Al.sub.y As compound semiconductor single crystalline thin film serving as a surface protective layer and having a second AlAs mole fraction to be sequentially grown on a GaAs crystal substrate. The method comprises the step of causing the thick-film layer and the thin film to be sequentially grown on the GaAs crystal substrate. The GaAs crystal substrate is removed after sequential epitaxial growth of the thick-film layer and thin film on the GaAs crystal substrate.
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