公开(公告)号：US5209811A

公开(公告)日：1993-05-11

申请号：US810362

申请日：1991-12-18

申请人： Yutaka Kitagawara ,  Susumu Kuwahara ,  Takao Takenaka

发明人： Yutaka Kitagawara ,  Susumu Kuwahara ,  Takao Takenaka

IPC分类号： C30B33/00

CPC分类号： C30B33/00 ,  C30B29/42

摘要： A heat-treating method for an indium-doped dislocation-free gallium arsenide monocrystal having a low carbon concentration and grown in the Liquid Encapsulated Czochralski method, comprising a two-step heat treatment:(i) heating the monocrystal at a temperature between 1050.degree. C. and 1200.degree. C. for a predetermined time length, and cooling the monocrystal quickly; and(ii) heating the monocrystal at a temperature between 750.degree. C. and 950.degree. C. for a predetermined time length, and cooling the monocrystal quickly.

摘要翻译： 一种具有低碳浓度的铟掺杂的无位错的砷化镓单晶的热处理方法，其在液体封装的切克劳斯基法中生长，包括两步热处理：（​​i）在1050℃之间的温度下加热单晶 C.和1200℃预定的时间长度，并快速冷却单晶; 和（ii）在750℃至950℃的温度下加热单晶体预定的时间长度，并快速冷却单晶。

公开(公告)号：US08728870B2

公开(公告)日：2014-05-20

申请号：US12664232

申请日：2008-06-04

申请人： Satoshi Tobe ,  Takao Takenaka

发明人： Satoshi Tobe ,  Takao Takenaka

IPC分类号： H01L25/065

CPC分类号： H01L21/3226 ,  H01L21/187

摘要： Provided are a thin film silicon wafer having high gettering capability, a manufacturing method therefor, a multi-layered silicon wafer formed by laminating the thin film silicon wafers, and a manufacturing method therefor. The thin film silicon wafer is manufactured by: forming one or more gettering layers immediately below a device layer which is formed in a vicinity of a front surface of a semiconductor silicon wafer; fabricating a device in the device layer of the semiconductor silicon wafer; and after the device has been fabricated, removing part of the semiconductor silicon wafer from a rear surface thereof to immediately below the gettering layers so as to leave at least one of the gettering layers in place. As a result, the thin film silicon wafer is allowed to have gettering capability even after having been reduced in thickness to be in a thin film form.

摘要翻译： 提供一种具有高吸气能力的薄膜硅晶片及其制造方法及其制造方法。 薄膜硅晶片通过以下方式制造：在形成于半导体硅晶片的前表面附近的器件层的正下方形成一个或多个吸杂层; 在半导体硅晶片的器件层中制造器件; 并且在器件制造之后，将半导体硅晶片的一部分从其后表面移除到吸气层的正下方，以便将至少一个吸气层留在适当位置。 结果，薄膜硅晶片即使在厚度减小到薄膜形式之后也具有吸气能力。

公开(公告)号：US5739553A

公开(公告)日：1998-04-14

申请号：US577961

申请日：1995-12-26

申请人： Nobuhiko Noto ,  Keizo Adomi ,  Takao Takenaka

发明人： Nobuhiko Noto ,  Keizo Adomi ,  Takao Takenaka

IPC分类号： H01L33/14 ,  H01L33/30 ,  H01L33/00

CPC分类号： H01L33/30 ,  H01L33/14

摘要： The present invention provides an AlGaInP light-emitting device with a longer life and higher reliability. The AlGaInP light-emitting device comprises an n-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), an (Al.sub.0.15 Ga.sub.0.85).sub.0.51 In.sub.0.49 P active layer (about 0.6 .mu.m in thickness), a p-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), and a p-type current-spreading layer composed of either a p-type Al.sub.0.7 Ga.sub.0.3 As layer (about 3 .mu.m in thickness) or a p-type Al.sub.0.7 Ga.sub.0.3 As.sub.0.97 P.sub.0.03 layer (about 3 .mu.m in thickness) and a p-type GaAs.sub.0.5 P.sub.0.5 layer (about 7 .mu.m in thickness), in sequence formed on an n-type GaAs substrate, and further an upper surface electrode mounted on the p-type GaAs.sub.0.5 P.sub.0.5 layer and a lower surface electrode mounted on the lower surface of the n-type GaAs substrate.

摘要翻译： 本发明提供一种具有更长寿命和更高可靠性的AlGaInP发光器件。 AlGaInP发光器件包括n型（Al0.7Ga0.3）0.51In0.49P包层（厚度约1μm），（Al0.15Ga0.85）0.51In0.49P有源层（约0.6 厚度为1μm），p型（Al0.7Ga0.3）0.51In0.49P包层（厚度约1μm）以及由p型Al0构成的p型电流扩展层。 （厚约3μm）或p型Al0.7Ga0.3As0.97P0.03层（约3μm厚）和p型GaAs0.5P0.5层（约7μm） m），依次形成在n型GaAs衬底上，另外安装在p型GaAs0.5P0.5层上的上表面电极和安装在n型GaAs的下表面上的下表面电极 基质。

公开(公告)号：US5598452A

公开(公告)日：1997-01-28

申请号：US524453

申请日：1995-09-06

申请人： Hiroshi Takeno ,  Ryoji Hoshi ,  Satoshi Ushio ,  Takao Takenaka

发明人： Hiroshi Takeno ,  Ryoji Hoshi ,  Satoshi Ushio ,  Takao Takenaka

IPC分类号： G01N23/207 ,  H01L21/66

CPC分类号： G01N23/207

摘要： According to the invention, it is sought to provide a method of evaluating single crystal of silicon, which permits determination of the amount of precipitated oxygen of even a sample having been heat treated and with unknown initial interstitial oxygen concentration. X-rays radiated from X-ray source 7 is converted by slit 6 into a thin, parallel incident X-ray beam 3 to be incident on sample single crystal 1. After adjusting the angle .theta.1 of sample with respect to the incident X-ray beam such as to satisfy Bragg conditions, diffracted X-rays 4 produced by diffraction on the sample single crystal 1 are coupled from the back side thereof through X-ray receiving slit 8 to scintillator 5 for intensity measurement. The amount of precipitated oxygen is calculated from the measured diffracted X-ray intensity.

摘要翻译： 根据本发明，寻求提供一种评估硅单晶的方法，其允许确定即使经热处理的样品和未知的初始间隙氧浓度的沉淀氧的量。 从X射线源7辐射的X射线被狭缝6转换为薄的平行的入射X射线束3，以入射到样品单晶1上。在调整样品相对于入射X射线的角度θ1后， 例如为了满足布拉格条件，由样品单晶1衍射产生的衍射X射线4从背面通过X射线接收狭缝8耦合到用于强度测量的闪烁体5。 从测量的衍射X射线强度计算沉淀氧的量。

公开(公告)号：US5585305A

公开(公告)日：1996-12-17

申请号：US249197

申请日：1994-05-26

申请人： Masato Yamada ,  Takao Takenaka

发明人： Masato Yamada ,  Takao Takenaka

IPC分类号： H01L21/22 ,  H01L21/223 ,  H01L33/00 ,  H01L33/30

CPC分类号： H01L33/305 ,  H01L21/2205 ,  H01L21/2233 ,  H01L33/0062 ,  Y10S148/099

摘要： A method for fabricating a semiconductor device includes the steps of growing a second semiconductor layer on a first semiconductor layer which is highly doped with an impurity such as Zn and diffusing the impurity concurrently with the growing step of the second semiconductor layer from the first semiconductor layer as an impurity source to the second semiconductor layer to have a predetermined carrier concentration profile, by controlling both the diffusing speed of said impurity and the growing speed of said second semiconductor layer by changing the temperature in accordance with a predetermined sequence to have a predetermined carrier concentration profile in the second semiconductor layer.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在第一半导体层上生长第二半导体层，该第一半导体层高度掺杂有诸如Zn的杂质，并且与第二半导体层的生长步骤同时从第一半导体层扩散杂质 作为第二半导体层的杂质源以通过根据预定的顺序改变温度来控制所述杂质的扩散速度和所述第二半导体层的生长速度，以具有预定的载流子浓度分布，以具有预定的载流子 第二半导体层中的浓度分布。

公开(公告)号：US5444269A

公开(公告)日：1995-08-22

申请号：US251370

申请日：1994-05-31

申请人： Keizo Adomi ,  Nobuhiko Noto ,  Takao Takenaka

发明人： Keizo Adomi ,  Nobuhiko Noto ,  Takao Takenaka

IPC分类号： H01L33/14 ,  H01L33/30 ,  H01L33/00

CPC分类号： H01L33/14

摘要： An AlGaInP double heterojunction structure or an AlGaInP single heterojunction structure is formed on a first conductivity-type GaAs substrate, and then a layer made of a second conductivity-type Al.sub.w Ga.sub.1-w As.sub.1-v P.sub.v mixed crystal (Al.sub.0.7 Ga.sub.0.3 As.sub.0.97 P.sub.0.03, for example) which has the bandgap energy larger than the energy of photon emitted from the active layer of said light emitting layer portion, and has good lattice-matching with (Al.sub.B Ga.sub.1-B).sub.0.51 In.sub.0.49 P mixed crystal (layer) constituting said light emitting layer portion, is formed as a current spreading layer on top of said light emitting layer portion. Here, w and v are in the range of 0.45.ltoreq.w

摘要翻译： 在第一导电型GaAs衬底上形成AlGaInP双异质结结构或AlGaInP单异质结结构，然后形成由第二导电型AlwGa1-wAs1-vPv混晶（Al0.7Ga0.3As0.97P0.03 具有比从所述发光层部分的有源层发射的光子能量大的带隙能量，并且与构成所述发光层部分的（AlBGa1-B）0.51In0.49P混晶（层）具有良好的晶格匹配 发光层部分形成为在所述发光层部分的顶部上的电流扩散层。 这里，w和v分别在0.45

公开(公告)号：US5401684A

公开(公告)日：1995-03-28

申请号：US984920

申请日：1992-12-02

申请人： Masato Yamada ,  Takao Takenaka ,  Shinji Orimo

发明人： Masato Yamada ,  Takao Takenaka ,  Shinji Orimo

IPC分类号： H01L21/208 ,  H01L33/00 ,  H01L33/30 ,  H01L33/40

CPC分类号： H01L33/0025 ,  H01L33/0062 ,  Y10S148/101 ,  Y10S148/135 ,  Y10S438/955

摘要： Disclosed are a light-emitting semiconductor device substrate and a method of manufacturing the same. The substrate is prepared by causing a Ga.sub.1-x Al.sub.x As compound semiconductor single crystalline thick-film layer having a first AlAs mole fraction and a low Al containing and oxidation-delaying Ga.sub.1-y Al.sub.y As compound semiconductor single crystalline thin film serving as a surface protective layer and having a second AlAs mole fraction to be sequentially grown on a GaAs crystal substrate. The method comprises the step of causing the thick-film layer and the thin film to be sequentially grown on the GaAs crystal substrate. The GaAs crystal substrate is removed after sequential epitaxial growth of the thick-film layer and thin film on the GaAs crystal substrate.

摘要翻译： 公开了一种发光半导体器件基板及其制造方法。 通过使具有第一AlAs摩尔分数的Ga 1-x Al x As化合物半导体单晶厚膜层和作为表面保护层的低Al含量和氧化延迟Ga 1-y Al y As化合物半导体单晶薄膜制备基板，并具有 在GaAs晶体衬底上顺序生长的第二AlAs摩尔分数。 该方法包括使厚膜层和薄膜依次生长在GaAs晶体基板上的步骤。 在GaAs晶体衬底上的厚膜层和薄膜的顺序外延生长之后，去除GaAs晶体衬底。

公开(公告)号：US5254172A

公开(公告)日：1993-10-19

申请号：US854037

申请日：1992-03-19

申请人： Toshio Otaki ,  Hitoshi Ikeda ,  Masato Yamada ,  Takao Takenaka

发明人： Toshio Otaki ,  Hitoshi Ikeda ,  Masato Yamada ,  Takao Takenaka

IPC分类号： F27B7/20 ,  C30B19/06 ,  H01L21/00 ,  H01L21/208 ,  H01L21/22 ,  H01L21/31 ,  B08B3/04 ,  B05D7/24

CPC分类号： H01L21/67023 ,  C30B19/061

摘要： An semiconductor substrate processing apparatus of the type including a furnace tube associated with a fluid supply unit and a fluid discharge unit, wherein the furnace tube is rotatably supported by pairs of confronting rollers and rotated by a motor under the control of a controller in order to achieve various kinds of processing of semiconductor substrates within the furnace tube. With this rotatable furnace tube, the apparatus exhibits high radial temperature uniformity and is able to prevent deformation of the furnace tube.

公开(公告)号：US5612539A

公开(公告)日：1997-03-18

申请号：US557563

申请日：1995-11-14

申请人： Ryoji Hoshi ,  Yutaka Kitagawara ,  Takao Takenaka

发明人： Ryoji Hoshi ,  Yutaka Kitagawara ,  Takao Takenaka

IPC分类号： G01N21/63 ,  G01N21/66 ,  G01R31/26 ,  H01L21/66 ,  G01R31/265

CPC分类号： G01R31/2607 ,  G01N21/6489 ,  H01L22/14

摘要： A lifetime related quality evaluation method, used with a semiconductor wafer having a semiconductor thin layer over the main surface of a semiconductor substrate, for evaluating the lifetime related quality of the semiconductor thin layer and/or the vicinity thereof, characterized by: generating electron-hole pairs in the vicinity of a surface of the semiconductor thin layer by the use of excitation light having a larger energy than the band gap of a semiconductor to be tested; then detecting the intensity at a particular wavelength of light emitted by recombination of the electron-hole pairs; and evaluating the lifetime related quality of the semiconductor thin layer and/or the vicinity thereof based on the detected intensity. The lifetime related quality evaluation method realizes a non-contact, non-destructive quality evaluation of the epitaxial semiconductor wafer.

摘要翻译： 一种寿命相关的质量评估方法，用于在半导体衬底的主表面上具有半导体薄层的半导体晶片，用于评估半导体薄层的寿命相关质量和/或其附近，其特征在于： 通过使用具有比待测半导体的带隙大的能量的激发光，在半导体薄层的表面附近的空穴对; 然后检测由电子 - 空穴对的复合发射的光的特定波长处的强度; 以及基于检测到的强度来评估半导体薄层和/或其附近的寿命相关质量。 寿命相关的质量评估方法实现了外延半导体晶片的非接触，非破坏性的质量评估。

公开(公告)号：US5600158A

公开(公告)日：1997-02-04

申请号：US514628

申请日：1995-08-14

申请人： Nobuhiko Noto ,  Keizo Adomi ,  Takao Takenaka

发明人： Nobuhiko Noto ,  Keizo Adomi ,  Takao Takenaka

IPC分类号： H01L21/205 ,  H01L33/14 ,  H01L33/30 ,  H01L33/00

CPC分类号： H01L33/14

摘要： A semiconductor light emitting device comprising an n-type GaAs substrate, a light emitting layer portion consisting of an AlGaInP double heterojunction structure formed on the substrate, and a p-type current spreading layer formed on the light emitting layer portion, wherein the p-type current spreading layer comprises an undoped current spreading layer and a heavily-doped current spreading layer formed on said undoped current spreading layer. With this construction, it is possible to achieve a stable control of carrier concentration in a p-type cladding layer, to prevent deterioration of the interface between the p-type cladding layer and an active layer and also to prevent crystallinty-deterioration of the active layer with the result that the emission intensity of the device can be increased to a considerable extent.

摘要翻译： 一种半导体发光器件，包括n型GaAs衬底，由形成在衬底上的AlGaInP双异质结结构构成的发光层部分和形成在发光层部分上的p型电流扩散层， 型电流扩展层包括未掺杂电流扩展层和形成在所述未掺杂电流扩展层上的重掺杂电流扩散层。 通过这种结构，可以实现p型包覆层中的载流子浓度的稳定控制，以防止p型覆层与有源层之间的界面的劣化，并且防止活性物质的结晶劣化 从而可以在相当程度上增加器件的发光强度。