发明授权
- 专利标题: Process for producing a thin silicon solar cell
- 专利标题(中): 薄硅太阳能电池的制造方法
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申请号: US262381申请日: 1994-06-20
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公开(公告)号: US5403751A公开(公告)日: 1995-04-04
- 发明人: Shoji Nishida , Kenji Yamagata
- 申请人: Shoji Nishida , Kenji Yamagata
- 申请人地址: JPX Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX2-332231 19901129
- 主分类号: H01L21/20
- IPC分类号: H01L21/20 ; H01L31/0224 ; H01L31/18 ; H01L21/329
摘要:
A process for the production of a solar cell, characterized in that the surface of a silicon wafer is periodically exposed through minute spaced portions of an insulating layer formed on the silicon wafer; crystal growth is performed until monocrystalline silicon regions caused at the spaced portions by way of selective epitaxial growth and lateral crystal growth become collided with each other; the insulating layer is removed through gaps left among the monocrystals; a resin is embedded in the gaps; an electrode layer is formed over the surfaces of the monocrystalline silicon regions; the surface of the electrode layer is fastened to a substrate through a resin; a body comprising the monocrystalline silicon regions is separated from the silicon wafer; and a counter electrode is disposed to the monocrystalline silicon regions.
公开/授权文献
- US4393878A Pressure monitoring method and apparatus 公开/授权日:1983-07-19
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