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    Process for producing a thin silicon solar cell
    3.
    发明授权
    Process for producing a thin silicon solar cell 失效
    薄硅太阳能电池的制造方法

    公开(公告)号：US5403751A

    公开(公告)日：1995-04-04

    申请号：US262381

    申请日：1994-06-20

    申请人： Shoji Nishida ,  Kenji Yamagata

    发明人： Shoji Nishida ,  Kenji Yamagata

    IPC分类号： H01L21/20 ,  H01L31/0224 ,  H01L31/18 ,  H01L21/329

    CPC分类号： H01L31/022425 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/915 ,  Y10S148/153

    摘要： A process for the production of a solar cell, characterized in that the surface of a silicon wafer is periodically exposed through minute spaced portions of an insulating layer formed on the silicon wafer; crystal growth is performed until monocrystalline silicon regions caused at the spaced portions by way of selective epitaxial growth and lateral crystal growth become collided with each other; the insulating layer is removed through gaps left among the monocrystals; a resin is embedded in the gaps; an electrode layer is formed over the surfaces of the monocrystalline silicon regions; the surface of the electrode layer is fastened to a substrate through a resin; a body comprising the monocrystalline silicon regions is separated from the silicon wafer; and a counter electrode is disposed to the monocrystalline silicon regions.

    摘要翻译： 一种用于制造太阳能电池的方法，其特征在于，硅晶片的表面通过在硅晶片上形成的绝缘层的微小间隔部分周期性地暴露; 进行晶体生长，直到通过选择性外延生长和横向晶体生长在间隔部分处引起的单晶硅区域相互碰撞; 通过在单晶中留下的间隙去除绝缘层; 树脂嵌入在间隙中; 在单晶硅区域的表面上形成电极层; 电极层的表面通过树脂固定在基板上; 包括单晶硅区域的主体与硅晶片分离; 并且对电极设置在单晶硅区域。

    Liquid-phase growth apparatus and method
    5.
    发明授权
    Liquid-phase growth apparatus and method 失效
    液相生长装置及方法

    公开(公告)号：US07407547B2

    公开(公告)日：2008-08-05

    申请号：US11270562

    申请日：2005-11-10

    申请人： Masaki Mizutani ,  Katsumi Nakagawa ,  Takehito Yoshino ,  Shoji Nishida

    发明人： Masaki Mizutani ,  Katsumi Nakagawa ,  Takehito Yoshino ,  Shoji Nishida

    IPC分类号： C30B11/02

    CPC分类号： C30B19/068 ,  C30B19/02 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1024

    摘要： A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a taw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.

    摘要翻译： 用于在基板上生长晶体的液相生长装置包括含有包含用于形成晶体的原料的溶液的坩埚和用于垂直保持基板的基板保持器。 衬底保持器包括连接器，接收部件和推动部件。 接收部件和推动部件彼此相对并且通过连接器连接。 推动部件保持基板的上部，而接收部件保持基板的下部。 将含有垂直保持的基板的基板保持器浸入溶液中。 接收部件在包含在坩埚中的溶液中浮力上升，使得基板现在被牢固地保持并且防止由于热膨胀而开裂。

    Semiconductor member, manufacturing method thereof, and semiconductor device
    7.
    发明申请
    Semiconductor member, manufacturing method thereof, and semiconductor device 失效
    半导体元件及其制造方法以及半导体器件

    公开(公告)号：US20060113635A1

    公开(公告)日：2006-06-01

    申请号：US10540261

    申请日：2004-12-14

    申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

    发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

    IPC分类号： H01L21/20 ,  H01L31/117

    CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

    摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain induction porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

    摘要翻译： SiGe层生长在硅衬底上。 SiGe层或硅衬底和SiGe层通过对SiGe层进行阳极氧化以形成应变感应多孔层或多孔硅层和应变感应多孔层而被开孔化。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变感应多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 可以获得具有高应变硅层的高质量半导体衬底。

    Continuous production method for crystalline silicon and production apparatus for the same
    8.
    发明申请
    Continuous production method for crystalline silicon and production apparatus for the same 审中-公开
    晶体硅的连续生产方法及其制造装置

    公开(公告)号：US20050066881A1

    公开(公告)日：2005-03-31

    申请号：US10938509

    申请日：2004-09-13

    申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Hiroshi Sato ,  Shoji Nishida

    发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Hiroshi Sato ,  Shoji Nishida

    IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

    CPC分类号： H01L31/182 ,  C30B28/08 ,  C30B28/10 ,  C30B29/06 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T117/1032 ,  Y10T117/1056

    摘要： Provided is a continuous production method for crystalline silicon, including: retaining melted silicon in a crucible; solidifying a portion close to a surface of raw material silicon by providing a negative temperature gradient upward from the crucible; holding the solidified crystalline silicon by a pulling means; and pulling the solidified crystalline silicon at a predetermined rate, while shaping a sectional shape of the solidified crystalline silicon by bringing the solidified crystalline silicon in contact with an opened heater when the solidified crystalline silicon passes through an opening portion of the opened heater having an opening of a predetermined shape and maintained at a temperature higher than a melting point of the raw material silicon. The method allows continuous production of a crystalline silicon ingot having uniform crystallinity or impurity concentration and high quality at low cost even when low purity raw material silicon such as metallurgical grade silicon is used.

    摘要翻译： 提供了一种用于结晶硅的连续生产方法，包括：将熔融的硅保持在坩埚中; 通过从坩埚向上提供负温度梯度来固化靠近原料硅表面的部分; 通过牵引装置保持凝固的晶体硅; 并以预定的速率拉动固化的结晶硅，同时当固化的结晶硅通过具有开口的开放式加热器的开口部分时，通过使固化的结晶硅与开放的加热器接触来成形固化的结晶硅的截面形状 并且保持在比原料硅的熔点高的温度。 该方法即使在使用低纯度原料硅如冶金级硅时，也能以低成本连续生产具有均匀结晶度或杂质浓度和高质量的结晶硅锭。