发明授权
US5403756A Method of producing a polycrystalline semiconductor film without
annealing, for thin film transistor
失效
制造多晶半导体膜而不进行退火的方法，用于薄膜晶体管
- 专利标题： Method of producing a polycrystalline semiconductor film without annealing, for thin film transistor
- 专利标题（中）： 制造多晶半导体膜而不进行退火的方法，用于薄膜晶体管
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申请号： US158592申请日： 1993-11-24
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公开(公告)号： US5403756A公开(公告)日： 1995-04-04
- 发明人: Atsushi Yoshinouchi , Tatsuo Morita , Shuhei Tsuchimoto , Yasuaki Murata
- 申请人： Atsushi Yoshinouchi , Tatsuo Morita , Shuhei Tsuchimoto , Yasuaki Murata
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX3-304573 19911120; JPX4-14473 19920130; JPX4-210302 19920806; JPX4-307350 19921117
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/3215 ; H01L21/336 ; H01L21/266
摘要：
A method for producing a polycrystalline semiconductor film is disclosed. The method includes the steps of: forming a semiconductor film on a substrate; forming a passivation film on the semiconductor film; exciting a mixed gas including hydrogen and at least one element selected from the group consisting of the III, IV, and V groups of the periodic table to generate hydrogen ions and ions of the at least one element; and implanting the hydrogen ions into the semiconductor film through the passivation film and simultaneously implanting the ions of the at least one element into the semiconductor film through the passivation film, thereby changing the semiconductor film into a polycrystalline semiconductor film having the at least one element.
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