发明授权
- 专利标题： Method of making semiconductor devices and techniques for controlled optical confinement
- 专利标题（中）： 制造半导体器件的方法和控制光限制的技术
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申请号： US260067申请日： 1994-06-15
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公开(公告)号： US5403775A公开(公告)日： 1995-04-04
- 发明人: Nick Holonyak, Jr. , Fred A. Kish , Stephen J. Caracci
- 申请人： Nick Holonyak, Jr. , Fred A. Kish , Stephen J. Caracci
- 申请人地址： IL Urbana
- 专利权人： The Board of Trustees of the University of Illinois
- 当前专利权人： The Board of Trustees of the University of Illinois
- 当前专利权人地址： IL Urbana
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01S5/026 ; H01S5/10 ; H01S5/40 ; H01L21/20
摘要：
The disclosure is directed to improved techniques and devices employing an aluminum-bearing III-V semiconductor material and a native oxide of aluminum that is formed in the semiconductor material. Effective optical confinement, tailored to obtain desired operating conditions, can be achieved with a thick native oxide of aluminum that extends through at least one-third of the thickness of the aluminum-bearing layer in which the native oxide is formed. The resultant lateral index step can be made quite large and employed for devices such as ring lasers.
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