发明授权
- 专利标题： Solid state imaging device and method of manufacture therefor
- 专利标题（中）： 固态成像装置及其制造方法
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申请号： US72599申请日： 1993-06-03
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公开(公告)号： US5404039A公开(公告)日： 1995-04-04
- 发明人: Takashi Watanabe
- 申请人： Takashi Watanabe
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX4-143016 19920603
- 主分类号： H01L27/148
- IPC分类号： H01L27/148 ; H01L27/14 ; H01L31/00
摘要：
A solid state imaging device of the present invention includes: a semiconductor substrate of one conductive type; a well layer made of a semiconductor of the other conductive type formed on the semiconductor substrate; a photodetecting portion made of a semiconductor of one conductive type formed in an upper portion of the well layer; a high concentration semiconductor layer made of the other conductive type formed in an upper portion of the photodetecting portion; a first region of one conductive type formed in an upper portion of the semiconductor substrate, being in contact with the well layer and positioned at least below the photodetecting portion, having higher concentration than the semiconductor substrate; and a second region of the other conductive type formed in a lower portion of the well layer, being in contact with the semiconductor substrate and positioned on the first region.
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