发明授权
- 专利标题： Gap pure green light emitting element substrate
- 专利标题（中）： 间隙纯绿色发光元件基板
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申请号： US230538申请日： 1994-04-20
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公开(公告)号： US5406093A公开(公告)日： 1995-04-11
- 发明人: Masahisa Endo , Akio Nakamura , Susumu Higuchi
- 申请人： Masahisa Endo , Akio Nakamura , Susumu Higuchi
- 申请人地址： JPX Tokyo
- 专利权人： Shin-Etsu Handotai Co., Ltd.
- 当前专利权人： Shin-Etsu Handotai Co., Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-154168 19930531
- 主分类号： H01L33/30
- IPC分类号： H01L33/30 ; H01L33/00
摘要：
A GaP pure green light emitting element substrate comprising an n-type GaP layer 12 and a p-type GaP layer 14 formed on a GaP single crystal substrate 10, characterized by the fact that an intermediate GaP layer 13 is formed at the pn junction portion between said n-type GaP layer 12 and said p-type GaP layer 14, wherein said intermediate GaP layer has a donor concentration N.sub.D of less than 1.times.10.sup.-16 atoms/cm.sup.3 and an acceptor concentration N.sub.A nearly equal to the donor concentration N.sub.D. The thickness of the intermediate GaP layer 13 is in the range of 3-5 micrometers.
公开/授权文献
- US6160180A Tertiary phosphanes containing alkylene glycol groups 公开/授权日：2000-12-12
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