发明授权
- 专利标题： Single crystal growth method
- 专利标题（中）： 单晶生长法
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申请号： US962185申请日： 1992-12-28
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公开(公告)号： US5408952A公开(公告)日： 1995-04-25
- 发明人: Daisuke Wakabayashi , Toshio Anbe , Masao Saitoh
- 申请人： Daisuke Wakabayashi , Toshio Anbe , Masao Saitoh
- 申请人地址： JPX Tokyo JPX Tokyo
- 专利权人： Mitsubishi Materials Corporation,Mitsubishi Materials Silicon Corporation
- 当前专利权人： Mitsubishi Materials Corporation,Mitsubishi Materials Silicon Corporation
- 当前专利权人地址： JPX Tokyo JPX Tokyo
- 优先权： JPX3-125444 19910426; JPX3-99329 19910430; JPX3-138048 19910610
- 主分类号： C30B15/00
- IPC分类号： C30B15/00 ; C30B15/14 ; C30B15/20 ; C30B15/26
摘要：
In the present invention a signal is caused to fall on the molten liquid surface of single crystal raw material which was put into a crucible, the position of the molten liquid surface is measured by detecting the reflected signal coming from the molten liquid surface and the crucible is lifted according to the discrepancy to the set value.
公开/授权文献
- US4245409A Ski boot 公开/授权日：1981-01-20
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