Invention Grant
- Patent Title: Angled lateral pocket implants on p-type semiconductor devices
- Patent Title (中): p型半导体器件上的倾斜侧向袋植入
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Application No.: US221740Application Date: 1994-03-31
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Publication No.: US5409848APublication Date: 1995-04-25
- Inventor: Yu-Pin Han , Samuel J. S. Nagalingam
- Applicant: Yu-Pin Han , Samuel J. S. Nagalingam
- Applicant Address: CA San Jose
- Assignee: VLSI Technology, Inc.
- Current Assignee: VLSI Technology, Inc.
- Current Assignee Address: CA San Jose
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/336 ; H01L29/10
Abstract:
The punchthrough capacity of a p-type semiconductor device is significantly improved by nonuniformly doping the p-channel with n-type implants such as phosphorus. The n-type dopants are implanted at large angles to form pocket implants within the channel region. The dose of the implants, angle of the implants and the thermal cycle annealing of the implants will be optimized for maximum punchthrough capability without substantially detracting from the performance of the semiconductor device.
Public/Granted literature
- US6161468A Four-piece oil seal Public/Granted day:2000-12-19
Information query
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