Invention Grant
- Patent Title: Method of producing polycrystalline semiconductor thin film
- Patent Title (中): 多晶半导体薄膜的制造方法
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Application No.: US260304Application Date: 1994-06-15
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Publication No.: US5409867APublication Date: 1995-04-25
- Inventor: Akihiko Asano
- Applicant: Akihiko Asano
- Applicant Address: JPX Kanagawa
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JPX Kanagawa
- Priority: JPX5-144111 19930616
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/205 ; H01L21/469
Abstract:
After partially crystallizing an amorphous semiconductor deposited on a substrate, the irradition of infrared ray is conducted to grow a polycrystalline semiconductor layer on the crystallized region and the amorphous region by thermal decomposition while the temperature of the crystallized region is kept higher than that of the amorphous region. Since the polycystalline layer is formed of polycystalline grains grown from nuclei of the cystallized region, the crystal grain thereof is large.
Public/Granted literature
- US4355430A Pointing machine Public/Granted day:1982-10-26
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