发明授权
- 专利标题: Electron beam apparatus
- 专利标题(中): 电子束装置
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申请号: US982768申请日: 1992-11-27
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公开(公告)号: US5412209A公开(公告)日: 1995-05-02
- 发明人: Tadashi Otaka , Akimitsu Okura , Hiroshi Iwamoto , Hideo Todokoro , Tsutomu Komoda , Issei Tobita
- 申请人: Tadashi Otaka , Akimitsu Okura , Hiroshi Iwamoto , Hideo Todokoro , Tsutomu Komoda , Issei Tobita
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX3-335981 19911127; JPX3-335985 19911127; JPX3-335986 19911127
- 主分类号: G01Q30/02
- IPC分类号: G01Q30/02 ; H01J37/28 ; H01J37/14
摘要:
An electron beam apparatus comprises an electron beam source, a unit for irradiating an electron beam on a specimen, a detector for secondary electrons, an electrode for generating an electric field sufficient to draw out secondary electrons in a recess in the specimen from the recess, and a unit for generating a magnetic field for focusing secondary electrons drawn out of the recess. With this construction, the secondary electrons drawn out of the recess by the electric field reach the detector without being attracted by the electrode. By adopting this construction, a contact hole of high aspect ratio formed in a semiconductor device and having a small diameter and a large depth can be observed.
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