A semiconductor device includes a conductor layer (3, 7) having a silicon crystal, an insulator layer (5, 15) formed on the surface of the conductor layer (3, 7) having a contact hole therethrough to said surface of the conductor layer (3, 7), an interconnecting portion formed at a predetermined location in the insulator layer (5, 15) and having a contact hole (6, 9) the bottom surface of which becomes the surface of the conductor layer (3, 7), a barrier layer (14) formed at the bottom of said contact hole at least on the surface of the conductor layer (3, 7) in the interconnecting portion, and a metal silicide layer (12) formed on the barrier layer (14). This semiconductor device is manufactured by depositing the insulator layer (5, 15) having the contact hole (6, 9) on the conductor layer (3, 7) having the silicon crystal, forming the barrier layer (14) and the polysilicon layer (7, 10) overlapping each other in the contact hole (6, 9) and on the insulator layer (5, 15) and then patterning these overlapping barrier layer (14) and polysilicon layer (7, 10), forming a metal layer (8, 11) thereon to be silicidized, and removing unreacted metal. The semiconductor device thus manufactured prevents a suction of silicon from the conductor layer (3, 7) to the metal silicide layer (12) and hence prevents an increase in resistance value due to a deficiency of silicon produced in the conductor layer (3, 7), thereby minimizing a series resistance of the metal silicide layer (12), a contact portion and the conductor layer (3, 7).