发明授权
- 专利标题: Process for forming a static-random-access memory cell
- 专利标题(中): 形成静态随机存取存储单元的过程
-
申请号: US232968申请日: 1994-04-25
-
公开(公告)号: US5422296A公开(公告)日: 1995-06-06
- 发明人: Craig S. Lage
- 申请人: Craig S. Lage
- 申请人地址: IL Schaumburg
- 专利权人: Motorola, Inc.
- 当前专利权人: Motorola, Inc.
- 当前专利权人地址: IL Schaumburg
- 主分类号: H01L21/8244
- IPC分类号: H01L21/8244 ; H01L21/70
摘要:
An SRAM cell includes a pair of cross-coupled inverters where each inverter includes vertical n-channel and p-channel transistors having a gate electrode that is shared between the transistors that make up each inverter. The gate electrodes for the inverters laterally surround the channel regions of the p-channel load transistors to achieve a relatively high beta ratio without occupying a large amount of substrate surface area. Also, the gate electrodes increase the amount of capacitance of the storage nodes and decreases the soft error rate. The active regions of the latch transistors are electrically isolated from the substrate by a buried oxide layer, thereby decreasing the chances of latch-up.