发明授权
US5422921A X-ray mask structure and manufacturing methods including forming a metal
oxide film on a portion of an X-ray permeable film having no X-ray
absorber thereon
失效
X射线掩模结构和包括在其上没有X射线吸收体的X射线透过膜的一部分上形成金属氧化物膜的制造方法
- 专利标题： X-ray mask structure and manufacturing methods including forming a metal oxide film on a portion of an X-ray permeable film having no X-ray absorber thereon
- 专利标题（中）： X射线掩模结构和包括在其上没有X射线吸收体的X射线透过膜的一部分上形成金属氧化物膜的制造方法
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申请号： US975521申请日： 1992-11-12
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公开(公告)号： US5422921A公开(公告)日： 1995-06-06
- 发明人: Keiko Chiba
- 申请人： Keiko Chiba
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-326716 19911115; JPX3-326717 19911115; JPX4-194672 19920630
- 主分类号： G03F1/22
- IPC分类号： G03F1/22 ; G21K5/00 ; G11B11/00 ; H01L39/00
摘要：
An X-ray mask structure includes an X-ray absorber having a masking pattern, an X-ray permeable film for supporting the X-ray absorber on a surface of the X-ray permeable film, and a supporting frame for supporting the X-ray permeable film. The X-ray mask structure has a metal oxide film formed on a portion of the surface of the X-ray permeable film having no X-ray absorber thereon. Also disclosed is a method for manufacturing such an X-ray mask structure.
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