发明授权
- 专利标题: Oxide-superconduction grain boundary tunneling device
- 专利标题(中): 氧化物超导晶界隧道装置
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申请号: US9082申请日: 1993-01-26
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公开(公告)号: US5424281A公开(公告)日: 1995-06-13
- 发明人: Yoshinobu Tarutani , Ushio Kawabe
- 申请人: Yoshinobu Tarutani , Ushio Kawabe
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX62-165318 19870703
- 主分类号: H01L39/22
- IPC分类号: H01L39/22 ; H01L39/24 ; H01B12/00
摘要:
An oxide-superconducting device comprises first and second electrodes of oxide-superconductor which are connected through a tunnel barrier layer. The oxide-superconductor is formed on a substrate having a recess, and it includes grain boundaries along the recess. The tunnel barrier layer is formed along the grain boundaries, and it is made of any material of an element F, Cl, Br, I, C, O, S, P or N, a mixture consisting of such elements, and a compound containing such an element, the material being introduced into the grain boundaries and/or lattice interstices near the grain boundaries.
公开/授权文献
- USD352625S Fluid dispenser 公开/授权日:1994-11-22