Oxide-superconducting tunneling device formed on a submicron recess in
the substrate
    1.
    发明授权
    Oxide-superconducting tunneling device formed on a submicron recess in the substrate 失效
    形成在衬底中的亚微米凹槽上的氧化物 - 超导隧穿装置

    公开(公告)号:US5198413A

    公开(公告)日:1993-03-30

    申请号:US790085

    申请日:1991-11-13

    IPC分类号: H01L39/22 H01L39/24

    摘要: An oxide-superconducting device comprises first and second electrodes of oxide-superconductor which are connected through a tunnel barrier layer. The oxide-superconductor is formed on a substrate having a recess, and it includes grain boundaries along the recess. The tunnel barrier layer is formed along the grain boundaries, and it is made of any material of an element F, Cl, Br, I, C, O, S, P or N, a mixture consisting of such elements, and a compound containing such an element, the material being introduced into the grain boundaries and/or lattice interstices near the grain boundaries.

    摘要翻译: 氧化物超导装置包括通过隧道势垒层连接的氧化物超导体的第一和第二电极。 氧化物超导体形成在具有凹部的基板上,并且其包括沿着凹部的晶界。 隧道势垒层沿着晶界形成,并且由元素F,Cl,Br,I,C,O,S,P或N的任何材料构成,由这些元素组成的混合物和含 这种元素,该材料被引入晶粒边界附近和/或晶粒间隙附近。

    Oxide-superconduction grain boundary tunneling device
    6.
    发明授权
    Oxide-superconduction grain boundary tunneling device 失效
    氧化物超导晶界隧道装置

    公开(公告)号:US5424281A

    公开(公告)日:1995-06-13

    申请号:US9082

    申请日:1993-01-26

    IPC分类号: H01L39/22 H01L39/24 H01B12/00

    摘要: An oxide-superconducting device comprises first and second electrodes of oxide-superconductor which are connected through a tunnel barrier layer. The oxide-superconductor is formed on a substrate having a recess, and it includes grain boundaries along the recess. The tunnel barrier layer is formed along the grain boundaries, and it is made of any material of an element F, Cl, Br, I, C, O, S, P or N, a mixture consisting of such elements, and a compound containing such an element, the material being introduced into the grain boundaries and/or lattice interstices near the grain boundaries.

    摘要翻译: 氧化物超导装置包括通过隧道势垒层连接的氧化物超导体的第一和第二电极。 氧化物超导体形成在具有凹部的基板上,并且其包括沿着凹部的晶界。 隧道势垒层沿着晶界形成,并且由元素F,Cl,Br,I,C,O,S,P或N的任何材料构成,由这些元素组成的混合物和含 这种元素,该材料被引入晶粒边界附近和/或晶粒间隙附近。