发明授权
US5426331A Semiconductor device with multi-layered heat-resistive electrode in
titanium-titanium nitride-plantinum-gold system
失效
具有多层耐热电极的钛 - 氮化钛 - 植物金系统的半导体器件
- 专利标题： Semiconductor device with multi-layered heat-resistive electrode in titanium-titanium nitride-plantinum-gold system
- 专利标题（中）： 具有多层耐热电极的钛 - 氮化钛 - 植物金系统的半导体器件
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申请号： US210176申请日： 1994-03-17
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公开(公告)号： US5426331A公开(公告)日： 1995-06-20
- 发明人: Hiroshi Tsuda
- 申请人： Hiroshi Tsuda
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-059797 19930319
- 主分类号： H01L29/43
- IPC分类号： H01L29/43 ; H01L21/28 ; H01L23/485 ; H01L29/45 ; H01L23/48 ; H01L29/40
摘要：
A bipolar transistor fabricated on a silicon layer has a base electrode with a multi-layered structure implemented by a titanium film, a titanium nitride film, a platinum film and a gold film, and the platinum film is regulated to 5 to 30 nanometers thick for decreasing the thermal stress between the platinum film and the titanium nitride film equal to or greater than 50 nanometers, thereby preventing the bipolar transistor from damage due to heat applications in later stages.
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