发明授权
- 专利标题： Compound semicondutor light-emitting device
- 专利标题（中）： 复合半导体发光装置
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申请号： US212787申请日： 1994-03-15
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公开(公告)号： US5432808A公开(公告)日： 1995-07-11
- 发明人: Ako Hatano , Yasuo Ohba
- 申请人： Ako Hatano , Yasuo Ohba
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX5-080160 19930315
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L33/32 ; H01S5/02 ; H01S5/323 ; H01S3/19
摘要：
A compound semiconductor light-emitting device includes a cubic SiC substrate, and an Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layer formed on the (111) surface of the cubic-crystal SiC substrate. The surface of the Ga.sub.x Al.sub.y In.sub.1-x-y N layer, which opposes the substrate, is an N surface, and the light-emitting device has a pn junction.
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