发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US22722申请日： 1993-02-24
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公开(公告)号： US5441594A公开(公告)日： 1995-08-15
- 发明人: Masanobu Zenke
- 申请人： Masanobu Zenke
- 申请人地址： JPX
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX
- 优先权： JPX4-044119 19920228
- 主分类号： H01L21/3213
- IPC分类号： H01L21/3213 ; H01L21/285 ; H01L21/311 ; H01L21/768 ; H01L21/306 ; B44C1/22 ; C03C15/00 ; C23F1/00
摘要：
A contact hole reaching a diffusion layer 2 provided on the surface of a silicon substrate 1 is formed by etching an insulating film 3. At this time, a surface layer 2a formed on the surface of the diffusion layer 2 is removed within a film forming unit by utilizing chlorine trifluoride gas. Next, a polycrystalline silicon film 4 is formed within tile same film forming equipment. Thus, the surface of an electrically conductive layer (including a semiconductor layer) covered with the insulating film is selectively exposed by the etching process and, prior to the formation of the film (including oxidized layer), connected to the exposed surface of the electrically conductive layer, the surface layer formed on the surface of the electrically conductive layer, which includes a naturally oxidized film, damage, contaminated substances or the like, can be completely removed.
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