发明授权
- 专利标题： Method of manufacturing substrate having semiconductor on insulator
- 专利标题（中）： 制造绝缘体上半导体衬底的方法
-
申请号： US017257申请日： 1993-02-12
-
公开(公告)号： US5441899A公开(公告)日： 1995-08-15
- 发明人: Tetsuya Nakai , Yasuo Yamaguchi , Tadashi Nishimura
- 申请人： Tetsuya Nakai , Yasuo Yamaguchi , Tadashi Nishimura
- 申请人地址： JPX Tokyo JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha,Mitsubishi Materials Corporation
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha,Mitsubishi Materials Corporation
- 当前专利权人地址： JPX Tokyo JPX Tokyo
- 优先权： JPX4-030606 19920218; JPX4-331426 19921211
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/265 ; H01L21/322 ; H01L21/762 ; H01L21/76
摘要：
A polysilicon or amorphous Si layer is formed on a surface of a silicon substrate. Oxygen ions are implanted into the silicon substrate through the polysilicon layer, and an SiO.sub.2 film is formed in the silicon substrate at a position in a prescribed depth from the surface of silicon substrate. A heat treatment is performed to a silicon layer between the polysilicon layer and the SiO.sub.2 film, thereby providing an SOI layer with improved crystal quality.
公开/授权文献
信息查询
IPC分类:
