公开(公告)号：US07655315B2

公开(公告)日：2010-02-02

申请号：US11331216

申请日：2006-01-13

申请人： Eiji Kamiyama ,  Seiichi Nakamura ,  Tetsuya Nakai

发明人： Eiji Kamiyama ,  Seiichi Nakamura ,  Tetsuya Nakai

IPC分类号： B32B13/04 ,  B32B9/00 ,  B32B19/00

CPC分类号： H01L21/76243

摘要： A silicon wafer includes a principal face for forming electronic devices; an end region; and a tapered region which is located between the principal face and the end region, in which the thickness of the silicon wafer is gradually reduced, and which has a slope that makes an angle of greater than zero degree and less than 9.5 degrees or an angle of greater than 19 degrees with the principal face. An SOI wafer prepared by forming a buried oxide layer in a silicon wafer includes a principal face, end region, and tapered region that are substantially the same as those described above. A method for manufacturing an SOI wafer includes the steps of implanting oxygen ions into a silicon wafer; and heat-treating the resulting silicon wafer such that a buried oxide layer is formed in the silicon wafer.

摘要翻译： 硅晶片包括用于形成电子器件的主面; 末端区域 以及位于主面和端部区域之间的锥形区域，其中硅晶片的厚度逐渐减小，并且具有大于零度且小于9.5度的角度的倾斜度或角度 与主面大于19度。 通过在硅晶片中形成掩埋氧化物层制备的SOI晶片包括与上述基本相同的主面，端部区域和锥形区域。 一种制造SOI晶片的方法包括将氧离子注入到硅晶片中的步骤; 并对所得到的硅晶片进行热处理，使得在硅晶片中形成掩埋氧化物层。

公开(公告)号：US07514343B2

公开(公告)日：2009-04-07

申请号：US11450562

申请日：2006-06-08

申请人： Yoshiro Aoki ,  Yukio Komatsu ,  Tetsuya Nakai ,  Seiichi Nakamura

发明人： Yoshiro Aoki ,  Yukio Komatsu ,  Tetsuya Nakai ,  Seiichi Nakamura

IPC分类号： H01L21/425

CPC分类号： H01L21/26533 ,  H01L21/76243

摘要： This method for manufacturing a SIMOX wafer includes: heating a silicon wafer to 300° C. or more and implanting oxygen ions so as to form a high oxygen concentration layer within the silicon wafer; subjecting the silicon wafer to a cooling to less than 300° C. and an implanting of oxygen ions so as to form an amorphous layer; and subjecting the silicon wafer to a heat-treating in a mixed gas atmosphere containing oxygen so as to form a buried oxide layer. In the forming of the buried oxide layer, a starting temperature is less than 1350° C. and a maximum temperature is 1350° C. or more. This SIMOX wafer is manufactured by the above method and includes a BOX layer and a SOI layer on the BOX layer. The BOX layer has a thickness of 1300 Å or more and a breakdown voltage of 7 MV/cm or more, and the surface of the SOI layer and the interface between the SOI layer and the BOX layer have a roughness over a 10-μm square area of 4 Å rms or less.

摘要翻译： 该制造SIMOX晶片的方法包括：将硅晶片加热至300℃以上并注入氧离子以在硅晶片内形成高氧浓度层; 使硅晶片冷却至小于300℃，并注入氧离子以形成非晶层; 并在含氧气的混合气体气氛中对硅晶片进行热处理，以形成掩埋氧化物层。 在掩埋氧化物层的形成中，起始温度低于1350℃，最高温度为1350℃以上。 该SIMOX晶片通过上述方法制造，并且在BOX层上包括BOX层和SOI层。 BOX层的厚度为1300以上，击穿电压为7MV / cm以上，SOI层的表面和SOI层与BOX层之间的界面的平均粗糙度为10μm 面积为4Årms以下。

公开(公告)号：US20070178680A1

公开(公告)日：2007-08-02

申请号：US11670636

申请日：2007-02-02

申请人： Yoshiro Aoki ,  Yukio Komatsu ,  Tetsuya Nakai ,  Seiichi Nakamura

发明人： Yoshiro Aoki ,  Yukio Komatsu ,  Tetsuya Nakai ,  Seiichi Nakamura

IPC分类号： H01L21/425 ,  H01L21/31

CPC分类号： H01L21/76243

摘要： A SIMOX wafer having a BOX layer with a thin film thickness is obtained without a reduction in productivity or deterioration in quality. In a method for manufacturing a SIMOX wafer comprising: a step of forming a first ion-implanted layer in a silicon wafer; a step of forming a second ion-implanted layer that is in an amorphous state; and a high-temperature heat treatment step of maintaining the wafer in an oxygen contained atmosphere at a temperature that is not lower than 1300° C. but less than a silicon melting point for 6 to 36 hours to change the first and the second ion-implanted layers into a BOX layer, a gas containing chlorine that is not less than 0.1 volume % but less than 1.0 volume % is mixed into an atmosphere during temperature elevation in the high-temperature heat treatment.

摘要翻译： 获得具有薄膜厚度的BOX层的SIMOX晶片，而不会降低生产率或质量劣化。 一种用于制造SIMOX晶片的方法，包括：在硅晶片中形成第一离子注入层的步骤; 形成处于非晶态的第二离子注入层的步骤; 以及将晶片保持在含氧气氛中的不低于1300℃但小于硅熔点6〜36小时的高温热处理步骤，以改变第一和第二离子交换树脂， 将注入层置于BOX层中，在高温热处理的升温过程中将含有不少于0.1体积％但小于1.0体积％的氯的气体混入大气中。

公开(公告)号：US20060228492A1

公开(公告)日：2006-10-12

申请号：US11100610

申请日：2005-04-07

申请人： Yoshiro Aoki ,  Mitsuru Sudo ,  Tetsuya Nakai

发明人： Yoshiro Aoki ,  Mitsuru Sudo ,  Tetsuya Nakai

IPC分类号： C23C14/00 ,  B05D3/02

CPC分类号： C23C8/80 ,  C23C8/12 ,  C23C14/48 ,  C30B29/06 ,  C30B33/005 ,  H01L21/76243

摘要： In the method for manufacturing a SIMOX wafer, oxygen ions are implanted into a silicon wafer, then the silicon wafer is subjected to a prescribed heat treatment so as to form a buried oxide layer in the silicon wafer. The prescribed heat treatment includes: a step of ramping up a temperature of the silicon wafer in a low oxygen partial pressure gas atmosphere having an oxygen partial pressure ratio of less than 5%; either or both of a step of oxidizing the silicon wafer in a high oxygen partial pressure gas atmosphere having an oxygen partial pressure ratio of 5% or more and a step of annealing the silicon wafer in a low oxygen partial pressure gas atmosphere having an oxygen partial pressure ratio of less than 5%; and a step of ramping down the temperature of the silicon wafer in a low oxygen partial pressure gas atmosphere having an oxygen partial pressure ratio of less than 5%. A hydrogen chloride gas is mixed with the low oxygen partial pressure gas having an oxygen partial pressure ratio of less than 5% in at least one step from among the ramp-up step, the anneal step and the ramp-down step.

摘要翻译： 在制造SIMOX晶片的方法中，将氧离子注入到硅晶片中，然后对硅晶片进行规定的热处理，以在硅晶片中形成掩埋氧化物层。 规定的热处理包括：在氧分压比小于5％的低氧分压气氛中升高硅晶片的温度的步骤; 在氧分压比为5％以上的高氧分压气氛中氧化硅晶片的步骤中的一个或两个，以及在具有氧部分的低氧分压气氛中退火硅晶片的步骤 压力比小于5％; 以及在氧分压比小于5％的低氧分压气体气氛中降低硅晶片的温度的步骤。 从斜坡上升步骤，退火步骤和斜坡下降步骤至少一个步骤，将氯化氢气体与氧分压比小于5％的低氧分压气体混合。

公开(公告)号：US07811878B2

公开(公告)日：2010-10-12

申请号：US12423585

申请日：2009-04-14

申请人： Tetsuya Nakai ,  Bong-Gyun Ko ,  Takeshi Hamamoto ,  Takashi Yamada

发明人： Tetsuya Nakai ,  Bong-Gyun Ko ,  Takeshi Hamamoto ,  Takashi Yamada

IPC分类号： H01L21/8238

CPC分类号： H01L21/76243

摘要： To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface. After partially forming a mask oxide film 23 on the surface of a substrate 12 constituted of single crystal silicon, oxygen ions 16 are implanted into the surface of the substrate through the mask oxide film, and the substrate is annealed to form an buried oxide film 13 inside the substrate. Further included is a step of forming a predetermined-depth concave portion 12c deeper than substrate surface 12b serving as a bulk area on which the mask oxide film is formed on the substrate surface 12a serving as an SOI area by forming a thermally grown oxide film 21 on the substrate surface 12a serving as an SOI area on which the mask oxide film is not formed between the step of forming the mask oxide film and the step of implanting oxygen ions.

摘要翻译： 为了容易且准确地将用作SOI区域的基板表面与用作主体区域的基板表面冲洗，形成掩埋氧化膜，并且防止氧化膜暴露在基板表面上。 在由单晶硅构成的基板12的表面上部分地形成掩模氧化膜23之后，通过掩模氧化膜将氧离子16注入基板的表面，并将基板退火以形成掩埋氧化膜13 在基板内。 进一步包括通过形成热生长氧化物膜21，形成比作为其上形成有掩模氧化膜的体积面的衬底表面12b更深的预定深度凹部12c的步骤，该衬底表面12b形成在用作SOI区域的衬底表面12a上 在形成掩模氧化膜的步骤和注入氧离子的步骤之间作为其上未形成掩模氧化物膜的SOI区域的衬底表面12a上。

公开(公告)号：US20070117361A1

公开(公告)日：2007-05-24

申请号：US11561195

申请日：2006-11-17

申请人： Tetsuya Nakai

发明人： Tetsuya Nakai

IPC分类号： H01L21/425 ,  H01L23/58

CPC分类号： H01L21/76243 ,  Y10S438/926 ,  Y10S438/948

摘要： A substrate surface serving as an SOI region and a substrate surface serving as a bulk region are made to form the same plane easily and highly accurately, a thickness of a buried oxide film is made uniform, and the buried oxide film is also prevented from being exposed on the substrate surface. After partially forming a mask oxide film (19) on a surface of a silicon substrate (12), an oxygen ions (16) are implanted into the surface of the substrate through this mask oxide film, and the substrate is further subjected to annealing treatment to form a buried oxide film (13) inside the substrate. Between the step of forming the mask oxide film and the step of implanting the oxygen ions, a recess portion (12c) with a predetermined depth deeper than a substrate surface (12b) serving as the bulk region where the mask oxide film has been formed is formed in a substrate surface (12a) serving as the SOI region where the mask oxide film is not formed.

摘要翻译： 使作为SOI区域的基板表面和用作体区的基板表面容易且高精度地形成相同的平面，使掩埋氧化膜的厚度均匀，并且还防止了掩埋氧化膜 暴露在基板表面上。 在硅衬底（12）的表面上部分地形成掩模氧化膜（19）之后，通过该掩模氧化膜将氧离子（16）注入到衬底的表面中，并进一步对衬底进行退火处理 以在衬底内形成掩埋氧化膜（13）。 在形成掩模氧化膜的步骤和注入氧离子的步骤之间，具有比衬底表面（12b）更深的预定深度的凹陷部分（12c），该衬底表面用作掩模氧化膜已经被覆盖的主体区域 形成在用作未形成掩模氧化膜的SOI区域的衬底表面（12a）中。

公开(公告)号：US20070077718A1

公开(公告)日：2007-04-05

申请号：US11541385

申请日：2006-09-29

申请人： Tetsuya Nakai

发明人： Tetsuya Nakai

IPC分类号： H01L21/8222

CPC分类号： H01L21/76243

摘要： A process for manufacturing a silicon-on-insulator substrate comprising a single-crystal silicon substrate in which an oxide layer has been locally buried includes forming a step on the silicon substrate so that a region corresponding to the oxide layer has a greater surface height than other regions; then implanting oxygen ions in the silicon substrate so as to form the oxide layer.

摘要翻译： 一种用于制造绝缘体上硅衬底的方法，包括其中已经局部掩埋了氧化物层的单晶硅衬底包括在硅衬底上形成台阶，使得与氧化物层相对应的区域具有比 其他地区; 然后将氧离子注入到硅衬底中以形成氧化物层。

公开(公告)号：US5891265A

公开(公告)日：1999-04-06

申请号：US907073

申请日：1997-08-06

申请人： Tetsuya Nakai ,  Hiroshi Shinyashiki ,  Yasuo Yamaguchi ,  Tadashi Nishimura

发明人： Tetsuya Nakai ,  Hiroshi Shinyashiki ,  Yasuo Yamaguchi ,  Tadashi Nishimura

IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L21/324 ,  H01L21/76 ,  H01L21/762 ,  H01L27/00 ,  H01L27/12

CPC分类号： H01L21/324 ,  H01L21/26533 ,  H01L21/76243

摘要： Oxygen ion is implanted into a silicon substrate to remain a silicon layer on a surface of the silicon substrate. In this state, a silicon oxide layer is formed under the silicon layer. Silicon oxide particles are formed and remained in the residual silicon layer. While maintaining this state, the silicon substrate is heated to a predetermined temperature not less than 1300.degree. C. Alternatively, the silicon substrate is heated at a high temperature-rise rate to 900-1100.degree. C., and thereafter is heated at a low temperature-rise rate to the temperature not less than 1300.degree. C. The silicon substrate is held at the predetermined temperature not less than 1300.degree. C. for a predetermined time, whereby crystallinity of the residual silicon layer is restored. A pinning effect of the silicon oxide particles prevents the rise of dislocation to the surface of the SOI layer, and also suppresses a rate per a unit time at which interstitial silicon generates during the heating to the high temperature region. Therefore, a dislocation density of the SOI layer can be reduced.

摘要翻译： 将氧离子注入硅衬底中以在硅衬底的表面上保留硅层。 在该状态下，在硅层的下方形成氧化硅层。 形成氧化硅颗粒并残留在残余硅层中。 在保持该状态的同时，将硅衬底加热到​​不低于1300℃的预定温度。或者，将硅衬底以高升温速率加热至900-1100℃，然后在低温下加热 温度升至不低于1300℃的温度。硅衬底在预定温度不低于1300℃保持预定时间，从而恢复残留硅层的结晶度。 氧化硅颗粒的钉扎效应防止了位于SOI层表面的位错的上升，并且还抑制了在向高温区域加热期间间隙硅产生的每单位时间的速率。 因此，可以降低SOI层的位错密度。

公开(公告)号：US5741717A

公开(公告)日：1998-04-21

申请号：US391283

申请日：1995-02-21

申请人： Tetsuya Nakai ,  Hiroshi Shinyashiki ,  Yasuo Yamaguchi ,  Tadashi Nishimura

发明人： Tetsuya Nakai ,  Hiroshi Shinyashiki ,  Yasuo Yamaguchi ,  Tadashi Nishimura

IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L21/324 ,  H01L21/76 ,  H01L21/762 ,  H01L27/00 ,  H01L27/12

CPC分类号： H01L21/324 ,  H01L21/26533 ,  H01L21/76243

摘要： Oxygen ion is implanted into a silicon substrate to remain a silicon layer on a surface of the silicon substrate. In this state, a silicon oxide layer is formed under the silicon layer. Silicon oxide particles are formed and remained in the residual silicon layer. While maintaining this state, the silicon substrate is heated to a predetermined temperature not less than 1300.degree. C. Alternatively, the silicon substrate is heated at a high temperature-rise rate to 900.degree.-1100.degree. C., and thereafter is heated at a low temperature-rise rate to the temperature not less than 1300.degree. C. The silicon substrate is held at the predetermined temperature not less than 1300.degree. C. for a predetermined time, whereby crystallinity of the residual silicon layer is restored. A pinning effect of the silicon oxide particles prevents the rise of dislocation to the surface of the SOI layer, and also suppresses a rate per a unit time at which interstitial silicon generates during the heating to the high temperature region. Therefore, a dislocation density of the SOI layer can be reduced.

摘要翻译： 将氧离子注入硅衬底中以在硅衬底的表面上保留硅层。 在该状态下，在硅层的下方形成氧化硅层。 形成氧化硅颗粒并残留在残余硅层中。 在保持该状态的同时，将硅衬底加热到​​不低于1300℃的预定温度。或者，将硅衬底以高升温速率加热到900-111℃，然后在 低温升温速率不低于1300℃。硅衬底在预定温度不低于1300℃保持预定时间，从而恢复残余硅层的结晶度。 氧化硅颗粒的钉扎效应防止了位于SOI层表面的位错上升，并且还抑制了在加热到高温区域期间间隙硅产生的每单位时间的速率。 因此，可以降低SOI层的位错密度。

公开(公告)号：US5708752A

公开(公告)日：1998-01-13

申请号：US672538

申请日：1996-06-28

申请人： Yukio Noda ,  Yoshinori Mimura ,  Tetsuya Nakai ,  Toshio Tani

发明人： Yukio Noda ,  Yoshinori Mimura ,  Tetsuya Nakai ,  Toshio Tani

IPC分类号： C03C13/04 ,  G02B6/02 ,  G02B6/10 ,  G02B6/00

CPC分类号： G02B6/102 ,  C03C13/042 ,  G02B6/02

摘要： A high power laser transmitting fluoride glass fiber of an enhanced 2.94- .mu.m laser damage threshold value is disclosed, in which either of the core with a high refractive index and the cladding with a low refractive index is formed of fluoride glass which contains fluorine (F) as a component but has it substituted with 0 to 4.1 mol % of bromine (Br), chlorine (Cl), or bromine and chlorine. The optical fiber of the present invention may have its core formed of fluoride glass and its cladding formed of fluorine-contained resin, and the core glass has a composition that 70 to 80% of fluorine (F) is substituted with 0 to 4.1 mol % of bromine (Br), or chlorine (Cl), or bromine and chlorine.

摘要翻译： 公开了一种具有增强的2.94μm激光损伤阈值的高功率激光透射氟化物玻璃纤维，其中具有高折射率的芯中的任一种和具有低折射率的包层由含氟的氟化物玻璃形成（ F）作为组分，但是用0至4.1mol％的溴（Br），氯（Cl）或溴和氯代替。 本发明的光纤可以具有由氟化物玻璃形成的芯和由含氟树脂形成的包层，芯玻璃具有70〜80％的氟（F）被0〜4.1摩尔％ 的溴（Br）或氯（Cl），或溴和氯。