Invention Grant
- Patent Title: Non-saturating bipolar transistor circuit
- Patent Title (中): 非饱和双极晶体管电路
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Application No.: US161559Application Date: 1993-12-06
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Publication No.: US5444395APublication Date: 1995-08-22
- Inventor: Dwight D. Esgar , Ray D. Sundstrom , Phuc C. Pham
- Applicant: Dwight D. Esgar , Ray D. Sundstrom , Phuc C. Pham
- Applicant Address: IL Schaumburg
- Assignee: Motorola, Inc.
- Current Assignee: Motorola, Inc.
- Current Assignee Address: IL Schaumburg
- Main IPC: H03K17/0422
- IPC: H03K17/0422 ; H03K19/013 ; H03K19/018 ; H03K19/0175 ; H03K17/04
Abstract:
A non-saturating transistor circuit (11) having a first terminal (13), a control terminal (12), and a second terminal (14). The first terminal (13), control terminal (12), and second terminal (14) correspond respectively to a collector, base, and emitter of a transistor. The non-saturating transistor circuit (11) comprises a voltage divider (15), a diode (19), and a transistor (16). The voltage divider (15) enables the transistor (16) when a voltage is applied across the control terminal (12) and the second terminal (14) of non-saturating transistor circuit (11). The diode (19) removes current drive to the transistor (16) prior to the transistor (16) becoming saturated thus preventing the transistor (16) from saturating under all operating conditions.
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