发明授权
- 专利标题： Process on thickness control for silicon-on-insulator technology
- 专利标题（中）： 绝缘体上硅技术的厚度控制工艺
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申请号： US254532申请日： 1994-06-06
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公开(公告)号： US5449638A公开(公告)日： 1995-09-12
- 发明人: Gary Hong , Chen-Chiu Hsue , H. J. Wu , Lawrence Y. Lin
- 申请人： Gary Hong , Chen-Chiu Hsue , H. J. Wu , Lawrence Y. Lin
- 申请人地址： TWX Hsinchu
- 专利权人： United Microelectronics Corporation
- 当前专利权人： United Microelectronics Corporation
- 当前专利权人地址： TWX Hsinchu
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/76
摘要：
A method for forming a thin, uniform top silicon layer using bonded-wafer SOI technology is described. A dielectric layer is formed on a first surface of a first silicon substrate. A trench is formed in a first surface of a second silicon substrate. A polishing stopper is formed in the trench. A second dielectric layer with a smooth top surface is formed over the polishing stopper and over the first surface of the second silicon substrate. The smooth top surface of the second dielectric layer of the second silicon substrate is bonded to the dielectric layer of the first silicon substrate. Material is removed from the exposed surface of the second silicon substrate to form the silicon layer with well-controlled thickness, having a top surface co-planar with the polishing stopper.
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