发明授权
US5451806A Method and device for sensing a surface temperature of an insulated gate
semiconductor device
失效
用于感测绝缘栅极半导体器件的表面温度的方法和装置
- 专利标题： Method and device for sensing a surface temperature of an insulated gate semiconductor device
- 专利标题（中）： 用于感测绝缘栅极半导体器件的表面温度的方法和装置
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申请号： US205238申请日： 1994-03-03
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公开(公告)号： US5451806A公开(公告)日： 1995-09-19
- 发明人: Robert B. Davies
- 申请人： Robert B. Davies
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H01L27/07 ; H01L29/78 ; H01L23/56 ; H01L29/66
摘要：
A temperature sensing insulated gate semiconductor device (10) and method of using the insulated the insulated gate semiconductor device (10) for sensing a surface temperature. A lateral PNP bipolar transistor (63) is connected to a drain conductor (58) of an insulated gate field effect transistor (56). The insulated gate field effect transistor (56) is turned on, thereby shorting a collector conductor (64) with a base conductor (62) to form a diode connected lateral PNP bipolar transistor (63). A forward voltage is measured across an emitter-base junction of the diode connected lateral PNP bipolar transistor (63). The surface temperature of the insulated gate semiconductor device (10) is derived using the diode equation in conjunction with the current (67) and the forward voltage drop.
公开/授权文献
- USD267327S Laminating apparatus 公开/授权日：1982-12-21
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