发明授权
US5455194A Encapsulation method for localized oxidation of silicon with trench
isolation
失效
具有沟槽隔离的硅的局部氧化的封装方法
- 专利标题： Encapsulation method for localized oxidation of silicon with trench isolation
- 专利标题（中）： 具有沟槽隔离的硅的局部氧化的封装方法
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申请号： US398844申请日： 1995-03-06
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公开(公告)号： US5455194A公开(公告)日： 1995-10-03
- 发明人: Barbara Vasquez , Michael P. Masquelier , Scott S. Roth
- 申请人： Barbara Vasquez , Michael P. Masquelier , Scott S. Roth
- 申请人地址： IL Schaumburg
- 专利权人： Motorola Inc.
- 当前专利权人： Motorola Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/763 ; H01L21/76
摘要：
A method for the fabrication of a trench isolation region (44) includes the deposition of first, second, and third oxidizable layers (28, 34, 42). The first oxidizable layer (28) is deposited to overlie the surface of a trench (12) formed in a semiconductor substrate (10). The first oxidizable layer (28) also fills a recess (26) formed in a masking layer (14), and resides adjacent to the upper surface of the trench (12). After oxidizing the first oxidizable layer (28), a second oxidizable layer (34) is deposited to fill the trench (12). A third oxidizable layer (42) is deposited to overlie the second oxidizable layer (34) and fills a remaining portion of the recess (26). An oxidation process is performed to oxidize oxidizable layer (42) and a portion of second oxidizable layer (34) to form a trench isolation region (44). In an alternative embodiment of the invention, a shallow isolation region (46) is formed in proximity to the trench isolation region ( 44).
公开/授权文献
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