Invention Grant
- Patent Title: Ferroelectric memory
- Patent Title (中): 铁电存储器
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Application No.: US257542Application Date: 1994-06-09
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Publication No.: US5455786APublication Date: 1995-10-03
- Inventor: Kan Takeuchi , Katsumi Matsuno , Yoshinobu Nakagome , Masakazu Aoki
- Applicant: Kan Takeuchi , Katsumi Matsuno , Yoshinobu Nakagome , Masakazu Aoki
- Applicant Address: JPX Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JPX Tokyo
- Priority: JPX5-151917 19930623
- Main IPC: H01L27/10
- IPC: H01L27/10 ; G11C11/22 ; G11C14/00 ; H01L21/8246 ; H01L27/105
Abstract:
A highly reliable and high speed ferroelectric memory having high degree of integration is provided. In a ferroelectric memory having a plurality of memory cells M1 each constituted by one transistor and one ferroelectric capacitor. In the normal operation, the ferroelectric memory is used as a volatile memory in which a voltage of a storage node ST1 is utilized as the stored information. Both an electric potential at a plate PL1 of the ferroelectric capacitor and a precharge electric potential on a data line DL1(j) are made Vcc/2.
Public/Granted literature
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