发明授权
- 专利标题： Method of manufacturing a semiconductor device having multilayer insulating films
- 专利标题（中）： 制造具有多层绝缘膜的半导体器件的方法
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申请号： US223192申请日： 1994-04-05
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公开(公告)号： US5459105A公开(公告)日： 1995-10-17
- 发明人: Masazumi Matsuura
- 申请人： Masazumi Matsuura
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-294423 19901030
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/31 ; H01L21/316 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L ; H01L21/473
摘要：
A method of manufacturing a semiconductor device having a flat surface and an interlayer insulating film having superior crack resistance comprises forming a first silicon oxide film having a superior crack resistance on a semiconductor substrate so as to cover the surface of a stepped pattern. A second silicon oxide film having a superior step coverage is deposited on the first silicon oxide film so as to fill the recessed portions of the stepped pattern and to cover the stepped pattern. The second silicon oxide film is etched to a prescribed thickness. A third silicon oxide film superior in filling of recesses is placed into the recessed portions existing on the surface of the second silicon oxide film after its etching. A fourth silicon oxide film is formed on the semiconductor substrate including the second silicon oxide film and third silicon oxide film.
公开/授权文献
- US4895742A Convertible receptacle 公开/授权日：1990-01-23
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