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US5460990A Method for fabricating a segmented AMG EPROM where only every fourth bit line contacts a select transistor in a row of segment select transistors 失效
用于制造分段AMG EPROM的方法,其中只有每第四位线接到一行段选择晶体管中的选择晶体管

Method for fabricating a segmented AMG EPROM where only every fourth bit
line contacts a select transistor in a row of segment select transistors
摘要:
The current driven by the segment select transistors of an alternate-metal, virtual-ground (AMG) electrically programmable read-only-memory (EPROM), is increased by eliminating the even numbered segment select transistors in every other row of segment select transistors, and the odd numbered segment select transistors in the remaining rows, and by changing the current path through the segment so that the current flows from a segment select transistor in one row of segment select transistors to a segment select transistor in an adjacent row of transistors. By eliminating every other segment select transistor in each row of transistors, the maximum pitch of the segment select transistors can be substantially increased, thereby providing the required programming current, while at the same time maintaining the required isolation between adjacent segment select transistors.
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