发明授权
- 专利标题： Method of forming Hg-containing oxide superconducting films
- 专利标题（中）： 形成含Hg氧化物超导膜的方法
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申请号： US239963申请日： 1994-05-09
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公开(公告)号： US5462921A公开(公告)日： 1995-10-31
- 发明人: Hideaki Adachi , Kentaro Setsune , Koichi Mizuno
- 申请人： Hideaki Adachi , Kentaro Setsune , Koichi Mizuno
- 申请人地址： JPX
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX5-112848 19930514; JPX5-258163 19931015; JPX5-316191 19931216
- 主分类号： H01L39/12
- IPC分类号： H01L39/12 ; B05D5/12
摘要：
A method of fabricating a thin-film Hg-containing oxide superconductor is disclosed, which comprises forming a thin film on a substrate, said thin film containing mercury, an alkaline earth element, and copper as main components thereof; and subjecting said substrate with the thin film to a heat treatment in an oxygen-containing atmosphere at an oxygen partial pressure of 1/500 to 1/10 atm, to convert said thin film to the thin-film superconductor.
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