发明授权
- 专利标题： Method of fabricating integrated devices
- 专利标题（中）： 集成器件制造方法
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申请号： US129689申请日： 1993-09-30
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公开(公告)号： US5464784A公开(公告)日： 1995-11-07
- 发明人: Giuseppe Crisenza , Cesare Clementi
- 申请人： Giuseppe Crisenza , Cesare Clementi
- 申请人地址： ITX Milano
- 专利权人： SGS-Thomson Microelectronics s.r.l.
- 当前专利权人： SGS-Thomson Microelectronics s.r.l.
- 当前专利权人地址： ITX Milano
- 优先权： EPX92830542 19920930
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/8238 ; H01L21/8247 ; H01L27/088 ; H01L27/092 ; H01L27/10 ; H01L27/105 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; H01L21/266
摘要：
A method comprising the steps of depositing a first and second polysilicon layer, separated by an oxide layer; selectively etching the second polysilicon layer to form first gate regions; forming first substrate regions in the substrate and laterally in relation to the first gate regions; selectively etching the first polysilicon layer to form second gate regions of a length greater than the first gate regions; and forming in the substrate, laterally in relation to the second gate regions and partially overlapping the first substrate regions, second substrate regions of a higher doping level than the first substrate regions.
公开/授权文献
- US6062069A High temperature fouling test unit 公开/授权日：2000-05-16
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