发明授权
- 专利标题： Method of synthesizing III-V semiconductor nanocrystals
- 专利标题（中）： 合成III-V族半导体纳米晶体的方法
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申请号： US189232申请日： 1994-01-31
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公开(公告)号： US5474591A公开(公告)日： 1995-12-12
- 发明人: Richard L. Wells , Shreyas S. Kher
- 申请人： Richard L. Wells , Shreyas S. Kher
- 申请人地址： NC Durham
- 专利权人： Duke University
- 当前专利权人： Duke University
- 当前专利权人地址： NC Durham
- 主分类号： C01G15/00
- IPC分类号： C01G15/00 ; C01B25/08 ; C01G28/00 ; C01G30/00 ; C30B7/00 ; C30B7/02 ; C30B29/40 ; C22C12/00 ; C01B35/04 ; C22C28/00
摘要：
The present invention relates, in general, to a method of synthesizing nanocrystals and, in particular, to a method of synthesizing III-V semiconductor nanocrystals in solution at a low temperature and in a high yield. The method comprises the combination of mixing a Na/K alloy with an excess of Group VA element (E) in an aromatic solvent to form a (Na/K).sub.3 E pnictide, and subsequently mixing the pnictide with a Group IIIA trihalide (MX.sub.3) in a coordinating solution to form a suspension that includes the nanocrystalline semiconductor.
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