公开(公告)号：US5474591A

公开(公告)日：1995-12-12

申请号：US189232

申请日：1994-01-31

申请人： Richard L. Wells ,  Shreyas S. Kher

发明人： Richard L. Wells ,  Shreyas S. Kher

IPC分类号： C01G15/00 ,  C01B25/08 ,  C01G28/00 ,  C01G30/00 ,  C30B7/00 ,  C30B7/02 ,  C30B29/40 ,  C22C12/00 ,  C01B35/04 ,  C22C28/00

CPC分类号： C30B7/00 ,  C30B29/40 ,  C30B29/42 ,  C30B29/44 ,  Y10S420/903

摘要： The present invention relates, in general, to a method of synthesizing nanocrystals and, in particular, to a method of synthesizing III-V semiconductor nanocrystals in solution at a low temperature and in a high yield. The method comprises the combination of mixing a Na/K alloy with an excess of Group VA element (E) in an aromatic solvent to form a (Na/K).sub.3 E pnictide, and subsequently mixing the pnictide with a Group IIIA trihalide (MX.sub.3) in a coordinating solution to form a suspension that includes the nanocrystalline semiconductor.

摘要翻译： 本发明一般涉及一种合成纳米晶体的方法，尤其涉及在低温和高收率下在溶液中合成III-V族半导体纳米晶体的方法。 该方法包括将Na / K合金与过量的VA族元素（E）在芳族溶剂中混合以形成（Na / K）3E pnictide，然后将该混合物与IIIA族三卤化物（MX3）混合， 在协调解决方案中形成包括纳米晶体半导体的悬浮液。