Invention Grant
- Patent Title: Antifuse structure with increased breakdown at edges
- Patent Title (中): 防腐结构边缘增加破裂
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Application No.: US132071Application Date: 1993-10-04
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Publication No.: US5475253APublication Date: 1995-12-12
- Inventor: Kevin T. Look , Evert A. Wolsheimer
- Applicant: Kevin T. Look , Evert A. Wolsheimer
- Applicant Address: CA San Jose
- Assignee: Xilinx, Inc.
- Current Assignee: Xilinx, Inc.
- Current Assignee Address: CA San Jose
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/768 ; H01L23/525 ; H01L27/10 ; H01L29/04 ; H01L27/02 ; H01L49/00
Abstract:
An antifuse is provided which includes a first conductive layer, an antifuse layer formed on the first conductive layer, and a second conductive layer formed on the antifuse layer. A portion of the antifuse layer forms a substantially orthogonal angle with the first conductive layer and the second conductive layer. This "corner" formation of the antifuse enhances the electric field at this location during programming, thereby providing a predictable location for the filament, i.e. the conductive path between the first and second conductive layers. This antifuse provides other advantages including: a relatively low programming voltage, good step coverage for the antifuse layer and the upper conductive layer, a low, stable resistance value, and minimal shearing effects on the filament.
Public/Granted literature
- US6036576A Light sword toy with moving internal object Public/Granted day:2000-03-14
Information query
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