发明授权
US5481497A Semiconductor memory device providing external output data signal in
accordance with states of true and complementary read buses
失效
半导体存储器件根据真实和补充读取总线的状态提供外部输出数据信号
- 专利标题: Semiconductor memory device providing external output data signal in accordance with states of true and complementary read buses
- 专利标题(中): 半导体存储器件根据真实和补充读取总线的状态提供外部输出数据信号
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申请号: US304749申请日: 1994-09-12
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公开(公告)号: US5481497A公开(公告)日: 1996-01-02
- 发明人: Tadaaki Yamauchi , Hiroshi Miyamoto , Yoshikazu Morooka , Kiyohiro Furutani , Makiko Aoki
- 申请人: Tadaaki Yamauchi , Hiroshi Miyamoto , Yoshikazu Morooka , Kiyohiro Furutani , Makiko Aoki
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX5-227449 19930913; JPX6-106882 19940520
- 主分类号: G11C11/417
- IPC分类号: G11C11/417 ; G11C7/10 ; G11C11/407 ; G11C11/409 ; G11C7/00
摘要:
Read data supplied from one of a plurality of differential amplifier circuits is transmitted to a read data bus driver circuit via one of a plurality of CMOS transfer gates and a data latch circuit. The potential of read data bus pair is forcedly set to a low level in response to a control signal until the read data is transmitted to the read data bus driver circuit. Thereafter, the read data bus driver circuit drives the read data bus pair in accordance with the transmitted read data. Thereby, a speed of the address access operation can be increased without outputting invalid data.
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