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US5481497A Semiconductor memory device providing external output data signal in accordance with states of true and complementary read buses 失效
半导体存储器件根据真实和补充读取总线的状态提供外部输出数据信号

Semiconductor memory device providing external output data signal in
accordance with states of true and complementary read buses
摘要:
Read data supplied from one of a plurality of differential amplifier circuits is transmitted to a read data bus driver circuit via one of a plurality of CMOS transfer gates and a data latch circuit. The potential of read data bus pair is forcedly set to a low level in response to a control signal until the read data is transmitted to the read data bus driver circuit. Thereafter, the read data bus driver circuit drives the read data bus pair in accordance with the transmitted read data. Thereby, a speed of the address access operation can be increased without outputting invalid data.
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