Invention Grant
- Patent Title: Adiabatic MOS oscillators
- Patent Title (中): 绝热MOS振荡器
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Application No.: US367525Application Date: 1994-12-30
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Publication No.: US5483207APublication Date: 1996-01-09
- Inventor: Thaddeus J. Gabara
- Applicant: Thaddeus J. Gabara
- Applicant Address: NJ Murray Hill
- Assignee: AT&T Corp.
- Current Assignee: AT&T Corp.
- Current Assignee Address: NJ Murray Hill
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H03B1/00 ; H03B5/12 ; H01L27/04
Abstract:
High-frequency, low-power CMOS oscillators having electrically-tunable tank circuits are disclosed. Electrically-tunable inductors assure highly efficient oscillator operation and can be adjusted after manufacture to assure high yields of high-precision oscillator circuits.
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