发明授权
- 专利标题： Compound semiconductors and a method for thin film growth
- 专利标题（中）： 化合物半导体和薄膜生长方法
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申请号： US304985申请日： 1994-12-01
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公开(公告)号： US5490880A公开(公告)日： 1996-02-13
- 发明人: Yung-Chung Kao , Francis G. Celii
- 申请人： Yung-Chung Kao , Francis G. Celii
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments, Incorporated
- 当前专利权人： Texas Instruments, Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： C30B23/02
- IPC分类号： C30B23/02 ; H01L21/203 ; H01L21/66 ; C23C14/00
摘要：
A molecular beam epitaxy (MBE) system (10) is provided to grow thin film, epitaxy layers (44, 46, 48, 50) on compound semiconductor substrates (40). A mass spectrometer detector (95) is used to monitor and control the flux from selected sources (21, 23, 25, 27) within the MBE system (10). A uniform layer of indium gallium arsenide (46, 50) may be grown on a semiconductor substrate (40) by controlling the indium flux with respect to substrate (40) temperature and time. An epitaxy layer (46) of indium gallium arsenide with uniform mole fraction concentration and reduced lattice strain is produced.
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