发明授权
- 专利标题： Vertical low pressure CVD apparatus with an adjustable nozzle
- 专利标题（中）： 具有可调节喷嘴的垂直低压CVD设备
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申请号： US334303申请日： 1994-11-04
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公开(公告)号： US5503678A公开(公告)日： 1996-04-02
- 发明人: Tatsuya Usami
- 申请人： Tatsuya Usami
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-275344 19931104
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; C23C16/44 ; C23C16/455 ; H01L21/31 ; C23C16/00
摘要：
A vertical low pressure CVD (Chemical Vapor Deposition) apparatus includes a first and a second annular nozzle assigned to silane gas and an oxidizing gas, respectively. The first nozzle adjoins the lowermost portion of a boat loaded with a stack of wafers. The two nozzles are spaced from each other and have a plurality of holes arranged in a similar fashion. The oxidizing gas, jetted from the second nozzle, reaches the first nozzle over the same distance and, therefore, in the same amount as measured around the first nozzle. As a result, the two kinds of gas are mixed in a uniform ratio. The distance between the two nozzles may be changed for different types of oxidizing gases to uniformly mix the oxidizing gas with the silane gas without an early reaction.
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