发明授权
US5504022A Method of making a semiconductor memory device having a floating gate
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制造具有浮动栅极的半导体存储器件的方法
- 专利标题： Method of making a semiconductor memory device having a floating gate
- 专利标题（中）： 制造具有浮动栅极的半导体存储器件的方法
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申请号： US172279申请日： 1993-12-23
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公开(公告)号： US5504022A公开(公告)日： 1996-04-02
- 发明人: Toshiro Nakanishi , Yasuhisa Sato
- 申请人： Toshiro Nakanishi , Yasuhisa Sato
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX5-017117 19930107
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/8247 ; H01L29/788 ; H01L29/792
摘要：
A method of forming a non-volatile semiconductor memory device includes the steps of forming a generally periodical undulation on a surface of a silicon substrate with a pitch of 1-20 nm, by cleaning the surface of the substrate by a cleaning solution to form a native silicon oxide film that covers the surface of the silicon substrate with a thickness that changes generally periodically, followed by a selective etching process applied to the native silicon oxide film thus formed to expose the surface of the silicon substrate, and forming a tunneling oxide film on the undulated surface of the substrate by applying a thermal oxidation such that the tunneling oxide film has a thickness that changes generally periodically with a pitch of 1-20 nm.
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