发明授权
- 专利标题: Half-tone type phase shift mask and method for fabricating the same
- 专利标题(中): 半色调型相移掩模及其制造方法
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申请号: US366258申请日: 1994-12-29
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公开(公告)号: US5514500A公开(公告)日: 1996-05-07
- 发明人: Young M. Ham
- 申请人: Young M. Ham
- 申请人地址: KRX
- 专利权人: Hyundai Electronics Industries Co., Ltd.
- 当前专利权人: Hyundai Electronics Industries Co., Ltd.
- 当前专利权人地址: KRX
- 优先权: KRX93-31824 19931231
- 主分类号: H01L21/027
- IPC分类号: H01L21/027 ; G03F1/29 ; G03F1/32 ; G03F9/00
摘要:
There is disclosed a half-tone type phase shift mask comprising a transparent substrate on which a phase shift pattern and a chrome pattern, both provided with a window, are laminated in sequence, said window exposing a predetermined area of said transparent substrate therethrough, and said chrome pattern having a step near the window which is so thick as to permit penetration of only about 5 to 50% of an incident beam of light illuminated on said half-tone type phase shift mask. Such half-tone type phase shift mask is fabricated by: forming a phase shift layer on a transparent substrate; forming a light screen on the phase shift layer; selectively etching the light screen and the phase shift layer in sequence, to form a light screen pattern and a phase shift pattern, both provided with a window exposing a predetermined area of the transparent substrate; and removing the light screen pattern near said window at a predetermined thickness, to form a step near said window. It is capable of preventing the penetration of light at unintended areas, and thus is capable of providing a photosensitive pattern superior in smooth profile.
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