公开(公告)号：US5498497A

公开(公告)日：1996-03-12

申请号：US297666

申请日：1994-08-29

申请人： Young S. Kim ,  Young M. Ham ,  Ik B. Huh ,  Hung E. Kim

发明人： Young S. Kim ,  Young M. Ham ,  Ik B. Huh ,  Hung E. Kim

IPC分类号： G03F1/68 ,  G03F1/00 ,  G03F1/29 ,  G03F1/38 ,  G03F1/80 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/29 ,  G03F1/50

摘要： A phase shift layer is formed on a transparent glass on which a Cr pattern is formed and a phase shift layer pattern self-aligned by the Cr pattern is formed so that high resolution is obtained by minimized the overlapping error and the reliability of the semiconductor device is improved.

摘要翻译： 在形成有Cr图案的透明玻璃上形成相移层，形成通过Cr图案自对准的相移层图案，从而通过最小化重叠误差和半导体器件的可靠性获得高分辨率 改进了

公开(公告)号：US5556725A

公开(公告)日：1996-09-17

申请号：US365909

申请日：1994-12-29

申请人： Young M. Ham

发明人： Young M. Ham

IPC分类号： G03F1/29 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F7/2022 ,  G03F1/29

摘要： A method is disclosed for the fabrication of a phase shift mask comprising the steps of: forming chrome patterns on a transparent substrate; coating a phase shift layer and a negative photosensitive film on the entire area of the resulting structure, in sequence; exposing the photosensitive film to a light incident from the backside of the transparent substrate with the chrome patterns serving as a mask and developing the illuminated area of the photosensitive film, to form photosensitive film patterns; etching the phase shift layer to form phase shift patterns which are each positioned between the chrome patterns, with the photosensitive film patterns serving as a mask; subjecting the chrome patterns to wet etching, to conduct etching at the upper surface and the opposite edges of the chrome patterns so that each of the chrome patterns are spaced from each of the phase shift patterns; and removing the photosensitive film patterns with the transparent substrate exposed through the spaces between the etched chrome patterns and the phase shift patterns. The present method is advantageous in that a conventional chrome mask is utilized, so that particular equipments and additional designing are not necessary while the production cost thereof is reduced. In addition, the method is superior to conventional ones in process capability, thereby increasing the production yield of the devices.

摘要翻译： 公开了一种用于制造相移掩模的方法，包括以下步骤：在透明基板上形成铬图案; 依次在所得结构的整个区域上涂覆相移层和负型感光膜; 将感光膜暴露于从透明基板的背面入射的光，其中铬图案用作掩模并显影感光膜的照射区域，以形成感光膜图案; 蚀刻相移层以形成各自位于铬图案之间的相移图案，其中感光膜图案用作掩模; 对铬图案进行湿蚀刻，在铬图案的上表面和相对边缘处进行蚀刻，使得每个铬图案与每个相移图案间隔开; 以及通过在蚀刻的铬图案和相移图案之间的空间暴露的透明基板去除感光膜图案。 本方法的优点在于，使用常规的铬掩模，因此在生产成本降低的情况下不需要特定的设备和附加的设计。 此外，该方法优于传统的方法，从而提高了器件的生产成本。

公开(公告)号：US5573634A

公开(公告)日：1996-11-12

申请号：US362145

申请日：1994-12-22

申请人： Young M. Ham

发明人： Young M. Ham

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/47

CPC分类号： H01L21/76816 ,  H01L21/31144 ,  Y10S430/153 ,  Y10S438/948

摘要： A method for forming contact holes, capable of achieving an increased tolerance in design rule for formation of contact holes by: forming an insulating film over a semiconductor substrate; coating a positive photoresist film over the insulating film; primarily exposing the photoresist film to a light using a first exposure mask having windows adapted to allow portions of the insulating film corresponding to a part of contact holes to be exposed to the light, the part of contact holes having contact holes arranged diagonally to each other; secondarily exposing the photoresist film to the light using a second exposure mask having windows arranged diagonally to each other and not overlapped with those of the first exposure mask; removing the light-exposed portions of the photoresist film to form a photoresist film pattern for exposing portions of the insulating film respectively corresponding to the contact holes; and forming the contact holes using the photoresist film pattern as a mask. Since an approximation effect of contact holes is reduced by virtue of the increase tolerance in design rule for formation of contact holes, it is possible to obtain a more reduced space between adjacent contacts and thereby to form contact holes having a more increased dimension. Accordingly, the process yield can be increased.

摘要翻译： 一种用于形成接触孔的方法，能够通过以下方式在半导体衬底上形成绝缘膜来实现用于形成接触孔的设计规则的增加的公差; 在绝缘膜上涂覆正性光致抗蚀剂膜; 首先使用具有适于允许对应于一部分接触孔的绝缘膜的部分暴露于光的第一曝光掩模将光致抗蚀剂膜曝光到光，所述接触孔的部分具有彼此对角排列的接触孔 ; 使用具有彼此对角布置的窗口并且不与第一曝光掩模的窗口重叠的第二曝光掩模，将光致抗蚀剂膜二次曝光; 去除光致抗蚀剂膜的光曝光部分以形成用于暴露分别对应于接触孔的绝缘膜的部分的光致抗蚀剂膜图案; 并使用光致抗蚀剂膜图案作为掩模形成接触孔。 由于接触孔的近似效应由于形成接触孔的设计规则的增加公差而减小，所以可以获得相邻触头之间更多的空间，从而形成具有更大尺寸的接触孔。 因此，可以提高工艺产率。

公开(公告)号：US5576124A

公开(公告)日：1996-11-19

申请号：US407234

申请日：1995-03-21

申请人： Young M. Ham

发明人： Young M. Ham

IPC分类号： H01L21/027 ,  G03F1/00 ,  G03F9/00

CPC分类号： G03F1/30 ,  G03F1/26 ,  G03F1/34

摘要： A phase shift mask capable of achieving a variation in phase at the boundary between a light transmitting film and a phase shift film and thereby preventing formation of an undesirable pattern, and a method for fabricating the phase shift mask. The phase shifter has an inclined edge portion disposed at a boundary between the light transmitting film and the light shielding film. The method includes the steps of implanting impurity ions in the phase shifter and etching the phase shifter in a manner that the phase shifter is formed with an inclined edge portion at the boundary between the light transmitting film and the light shielding film.

摘要翻译： 一种相移掩模，其能够实现透光膜和相移膜之间的边界处的相位变化，从而防止形成不期望的图案，以及制造相移掩模的方法。 移相器具有设置在透光膜和遮光膜之间的边界处的倾斜边缘部分。 该方法包括以下步骤：在移相器中注入杂质离子并以移相器在透光膜和遮光膜之间的边界处形成倾斜边缘部分的方式蚀刻移相器。

公开(公告)号：US5576122A

公开(公告)日：1996-11-19

申请号：US331728

申请日：1994-10-31

申请人： Young M. Ham

发明人： Young M. Ham

IPC分类号： H01L21/308 ,  G03F1/00 ,  G03F9/00

CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F7/2022

摘要： A phase shift mask and a manufacturing method thereof are disclosed. To overcome problem that a photoresist film at an area unexposed to the light is removed by a certain thickness when the conventional half-tone phase shift mask is used for the formation of a photoresist film pattern, the phase shift mask comprises: a lower non-transmissionable film and a phase shift film laminated on a predetermined area unexposed to the light on a transparent substrate, the lower non-transmissionable film having a predetermined light-transmission degree; and an upper non-transmissionable film formed on the phase shift film.

摘要翻译： 公开了一种相移掩模及其制造方法。 为了克服当将常规半色调相移掩模用于形成光致抗蚀剂膜图案时，未暴露于光的区域上的光致抗蚀剂膜被去除一定厚度的问题，相移掩模包括： 可透射膜和层叠在透明基板上未曝光的预定区域上的相移膜，下部不可透过膜具有预定的透光度; 以及形成在相移膜上的上部不可透过膜。

公开(公告)号：US5543254A

公开(公告)日：1996-08-06

申请号：US375523

申请日：1995-01-19

申请人： Young S. Kim ,  Young M. Ham

发明人： Young S. Kim ,  Young M. Ham

IPC分类号： G03F1/30 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/26 ,  G03F1/30 ,  G03F1/34

摘要： A phase shift mask and a method for fabrication of a phase shift mask provided with a groove formed by etching to a predetermined depth a portion of a transparent substrate on which an edge portion of a phase shift film pattern directly coated on the transparent substrate is disposed, thereby capable of preventing the phenomenon of an undesirable photoresist film residue being left upon a silicon substrate using a Levenson-type phase shift mask.

摘要翻译： 一种相移掩模和一种制造相移掩模的方法，该相移掩模设置有通过在其上设置直接涂覆在透明基板上的相移膜图案的边缘部分的透明基板的一部分上蚀刻到预定深度而形成的凹槽 从而能够使用莱文森型相移掩模来防止不期望的光致抗蚀剂残留物残留在硅衬底上的现象。

公开(公告)号：US5635314A

公开(公告)日：1997-06-03

申请号：US492746

申请日：1995-06-21

申请人： Young M. Ham

发明人： Young M. Ham

IPC分类号： H01L21/027 ,  G03F1/00 ,  G03F9/00

CPC分类号： G03F1/26 ,  G03F1/30

摘要： The present invention relates to a phase shift mask for modifying blackout patterns at the peripheral sites of the mask, thereby capable of compensating the differences in the light intensity at the peripheral sites of the mask where the light intensity is relatively reduced after light has passed through the mask. The present invention enables the uniformity of critical dimension of the patterns in photoresist film, thus enhances the reliability and the yield of devices.

摘要翻译： 本发明涉及一种用于修改掩模周边位置处的遮光图案的相移掩模，从而能够补偿光通过之后光强度相对降低的掩模周边位置处的光强差异 面具。 本发明使得光致抗蚀剂膜中的图案的临界尺寸的均匀性提高了装置的可靠性和产量。

公开(公告)号：US5582938A

公开(公告)日：1996-12-10

申请号：US407868

申请日：1995-03-21

申请人： Young M. Ham

发明人： Young M. Ham

IPC分类号： G03F1/00 ,  G03F1/32 ,  G03F9/00

CPC分类号： G03F1/32

摘要： A phase shift mask capable of preventing the formation of a ghost image caused by diffraction and interference of light with the phase of 0.degree. and light with the phase of 180.degree. meeting upon forming a pattern by use of the mask of the Half-tone type mask. The phase shift mask includes a photoresist film pattern having a light transmitting portion and a light shielding portion, a phase shift layer adapted to shift the phase of light passing through the light shielding portion of the photoresist film pattern, and an assistant pattern adapted to remove unnecessary components of a main waveform of the light, which components are formed due to the diffraction of light at opposite sides of the main light waveform, the assistant pattern being comprised of a light transmitting portion for shifting the phase of a light incident thereon to 0.degree..

摘要翻译： 一种相移掩模，能够防止由相位为0°的光的衍射和干涉引起的重影的形成，并且通过使用半色调类型的掩模在形成图案时满足180°的相位 面具。 相移掩模包括具有光透射部分和遮光部分的光致抗蚀剂膜图案，适于移动通过光致抗蚀剂膜图案的遮光部分的光的相位的相移层和适于去除的辅助图案 由于在主光波形的相对侧的衍射光而形成光的主要波形的不需要的分量，辅助图案包括用于将入射到其上的光的相位移动到0的光透射部分 DEG。

公开(公告)号：US5543255A

公开(公告)日：1996-08-06

申请号：US382759

申请日：1995-02-02

申请人： Young M. Ham

发明人： Young M. Ham

IPC分类号： G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/29 ,  G03F1/32

摘要： There is disclosed a half-tone type phase shift mask consisting of: a transparent substrate; a phase shift pattern capped with a half-tone type light-penetrating pattern, both patterns being provided with a window exposing a predetermined area of the transparent substrate therethrough and the half-tone type light penetrating pattern having a thickness so that it is penetrated by only 5 to 20% of an incident light; and an optically opaque pattern covering all areas of the transparent substrate except for the phase shift pattern capped with the half-tone type light-penetrating pattern and the window, wherein an incident light penetrates only through the window and the phase shift pattern capped with the half-tone type light-penetrating pattern. The half-tone type phase shift mask is capable of preventing light from penetrating undesired areas and thus capable of obtaining a photoresist pattern with a superior smooth profile.

摘要翻译： 公开了一种半色调型相移掩模，其包括：透明基板; 以半色调型透光图案为中心的相移图案，两个图案设置有使透明基板的预定区域透过的窗口和具有厚度的半色调型透光图案，使得其透过 只有5到20％的入射光; 以及覆盖透明基板的除了半色调型透光图案和窗口覆盖的相移图案的所有区域的光学不透明图案，其中入射光仅穿过窗口，并且相移图案用 半色调型透光图案。 半色调型相移掩模能够防止光穿透不期望的区域，从而能够获得具有优异平滑轮廓的光致抗蚀剂图案。

公开(公告)号：US5514500A

公开(公告)日：1996-05-07

申请号：US366258

申请日：1994-12-29

申请人： Young M. Ham

发明人： Young M. Ham

IPC分类号： H01L21/027 ,  G03F1/29 ,  G03F1/32 ,  G03F9/00

CPC分类号： G03F1/29 ,  G03F1/32

摘要： There is disclosed a half-tone type phase shift mask comprising a transparent substrate on which a phase shift pattern and a chrome pattern, both provided with a window, are laminated in sequence, said window exposing a predetermined area of said transparent substrate therethrough, and said chrome pattern having a step near the window which is so thick as to permit penetration of only about 5 to 50% of an incident beam of light illuminated on said half-tone type phase shift mask. Such half-tone type phase shift mask is fabricated by: forming a phase shift layer on a transparent substrate; forming a light screen on the phase shift layer; selectively etching the light screen and the phase shift layer in sequence, to form a light screen pattern and a phase shift pattern, both provided with a window exposing a predetermined area of the transparent substrate; and removing the light screen pattern near said window at a predetermined thickness, to form a step near said window. It is capable of preventing the penetration of light at unintended areas, and thus is capable of providing a photosensitive pattern superior in smooth profile.

摘要翻译： 公开了一种半色调型相移掩模，其包括透明基板，在其上依次层叠有相移图案和均匀设置有窗口的铬图案，所述窗口暴露所述透明基板的预定区域，以及 所述镀铬图案具有靠近窗口的台阶，其厚度足以允许仅照射在所述半色调型相移掩模上的入射光束的约5至50％。 通过在透明基板上形成相移层来制造这种半色调型相移掩模; 在相移层上形成光屏; 依次选择性地蚀刻光屏和相移层，以形成光屏图案和相移图案，两者都设有暴露透明基板的预定区域的窗口; 并以预定厚度去除所述窗口附近的光屏图案，以形成靠近所述窗口的台阶。 它能够防止光在非预期区域的穿透，因此能够提供光滑图案优异的感光图案。