发明授权
- 专利标题： Semiconductor memory device having surrounding gate transistor
- 专利标题（中）： 具有周围栅极晶体管的半导体存储器件
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申请号： US266389申请日： 1994-06-27
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公开(公告)号： US5519236A公开(公告)日： 1996-05-21
- 发明人: Tohru Ozaki
- 申请人： Tohru Ozaki
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX5-156453 19930628
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; H01L21/8242 ; H01L27/108
摘要：
A semiconductor memory device includes at least one memory cell formed on a substrate. The memory cell is constructed by a hole capacitor and a vertical transistor. The hole capacitor is formed in a hole on the substrate. The vertical transistor is formed in a semiconductor column formed in position adjacent to the hole.
公开/授权文献
- US4916305A Optical detectors with selective bias voltage application 公开/授权日：1990-04-10
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