发明授权
- 专利标题： Semiconductor integrated circuit device and methods for production thereof
- 专利标题（中）： 半导体集成电路器件及其制造方法
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申请号： US332078申请日： 1994-11-01
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公开(公告)号： US5519658A公开(公告)日： 1996-05-21
- 发明人: Takayuki Uda , Toshiro Hiramoto , Nobuo Tamba , Hisashi Ishida , Kazuhiro Akimoto , Masanori Odaka , Tasuku Tanaka , Jun Hirokawa , Masayuki Ohayashi
- 申请人： Takayuki Uda , Toshiro Hiramoto , Nobuo Tamba , Hisashi Ishida , Kazuhiro Akimoto , Masanori Odaka , Tasuku Tanaka , Jun Hirokawa , Masayuki Ohayashi
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-157019 19910627; JPX4-100809 19920421; JPX4-139821 19920501
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L23/055 ; H01L23/525 ; H01L27/118 ; G11C7/00
摘要：
Disclosed are a semiconductor integrated circuit device and methods for production thereof. An embodiment of the invention is a semiconductor chip that comprises fuses constituting part of redundancy circuits formed therein, the fuses being made of the same ingredients CCB bump substrate metal. The fuses are patterned simultaneously during the patterning of the CCB bump substrate metal. This involves forming the fuses using at least part of the ingredients of an electrode conductor pattern in the chip. The cutting regions of the fuses are made of only one of the metal layers constituting the substrate. The principal plane of the semiconductor chip has a fuse protective film formed over at least the cutting regions of the fuses for protection of the latter. In operation, a switch MOSFET under switching control of a redundancy signal is used to select one of two transmission paths, one carrying an address signal or a decode signal, the other carrying a reference voltage. This allows a faulty circuit to be replaced with the corresponding redundancy circuit.
公开/授权文献
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